All MOSFET. IRF330 Datasheet


IRF330 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF330

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO3

IRF330 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF330 Datasheet (PDF)

0.1. 2n6760 irf330.pdf Size:146K _international_rectifier


PD - 90335FIRF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760HEXFETTRANSISTORS JANTXV2N6760THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF330 400V 1.00 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

0.2. irf3305pbf.pdf Size:267K _international_rectifier


PD - 95758AIRF3305PbFFeaturesHEXFET Power MOSFET Designed to support Linear Gate DriveApplications D 175C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and DesignRDS(on) = 8.0m Fully Avalanche RatedG Lead-FreeID = 75ASDescriptionThis HEXFET Power MOSFET utilizes a ruggedplanar process technology and dev

 0.3. irf330 irf331 irf332 irf333.pdf Size:212K _samsung


0.4. auirf3305.pdf Size:1364K _infineon


AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de

 0.5. irf330r irf331r irf332r irf333r.pdf Size:184K _no


0.6. irf3305.pdf Size:245K _inchange_semiconductor


INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3305IIRF3305FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

Datasheet: IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRFZ44A , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 .


Back to Top