All MOSFET. IRF330 Datasheet


IRF330 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF330
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 75 W
   Maximum Drain-Source Voltage |Vds|: 400 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 5.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 40(max) nS
   Drain-Source Capacitance (Cd): 200 pF
   Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
   Package: TO3

 IRF330 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF330 Datasheet (PDF)

 ..1. Size:146K  international rectifier
2n6760 irf330.pdf

IRF330 IRF330

PD - 90335FIRF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760HEXFETTRANSISTORS JANTXV2N6760THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF330 400V 1.00 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 ..2. Size:212K  samsung
irf330 irf331 irf332 irf333.pdf

IRF330 IRF330

 0.1. Size:267K  international rectifier

IRF330 IRF330

PD - 95758AIRF3305PbFFeaturesHEXFET Power MOSFET Designed to support Linear Gate DriveApplications D 175C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and DesignRDS(on) = 8.0m Fully Avalanche RatedG Lead-FreeID = 75ASDescriptionThis HEXFET Power MOSFET utilizes a ruggedplanar process technology and dev

 0.2. Size:1364K  infineon

IRF330 IRF330

AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de

 0.3. Size:184K  no
irf330r irf331r irf332r irf333r.pdf

IRF330 IRF330

 0.4. Size:245K  inchange semiconductor

IRF330 IRF330

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3305IIRF3305FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 0.5. Size:331K  inchange semiconductor

IRF330 IRF330

isc N-Channel MOSFET Transistor IRF3305BFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM R

Datasheet: IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , STP65NF06 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 .


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