All MOSFET. IRF330 Datasheet


IRF330 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF330

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 100 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO3

IRF330 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF330 Datasheet (PDF)

1.1. irf330r irf331r irf332r irf333r.pdf Size:184K _upd


1.2. irf3305pbf.pdf Size:267K _upd


PD - 95758A IRF3305PbF Features HEXFET® Power MOSFET Designed to support Linear Gate Drive Applications D 175°C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and Design RDS(on) = 8.0mΩ Fully Avalanche Rated G Lead-Free ID = 75A S Description This HEXFET Power MOSFET utilizes a rugged planar process technology and dev

 1.3. irf330 irf331 irf332 irf333.pdf Size:212K _upd


1.4. 2n6760 irf330.pdf Size:146K _international_rectifier


PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET?TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00? 5.5A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

Datasheet: IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRFZ44A , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 .


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