All MOSFET. IRF330 Datasheet

 

IRF330 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF330

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 620 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO3

IRF330 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF330 Datasheet (PDF)

1.1. 2n6760_irf330.pdf Size:146K _international_rectifier

IRF330
IRF330

PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET?TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00? 5.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

5.1. irf3315s.pdf Size:197K _international_rectifier

IRF330
IRF330

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

5.2. irf3315.pdf Size:124K _international_rectifier

IRF330
IRF330

PD -91623A APPROVED IRF3315 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175°C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene

5.3. irf3315l.pdf Size:197K _international_rectifier

IRF330
IRF330

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

5.4. irf3315sl.pdf Size:205K _international_rectifier

IRF330
IRF330

PD - 9.1617B IRF3315S/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

Datasheet: IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRFZ44A , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 .

 


IRF330
  IRF330
  IRF330
  IRF330
 
IRF330
  IRF330
  IRF330
  IRF330
 

social 

LIST

Last Update

MOSFET: 2SK3065T100 | 2SK3064 | 2SK3054C | 2SK2258-01 | 2SK2257-01 | 2SK2252-01S | 2SK2252-01L | 2SK2247 | 2SK2236 | 2SK2235 | 2SK2230 | 2SK2228 | 2SK2225-80-E | 2SK2224-01R | 2SK1928 |

Enter a full or partial SMD code with a minimum of 2 letters or numbers