APM4230K MOSFET. Datasheet pdf. Equivalent
Type Designator: APM4230K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 13.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: SOP8
APM4230K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APM4230K Datasheet (PDF)
apm4230k.pdf
APM4230KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 25V/13.5A, DDDRDS(ON)=6m(typ.) @ VGS=10VRDS(ON)=7.5m(typ.) @ VGS=4.5VSS Super High Dense Cell DesignSG Avalanche Rated Top View of SOP - 8 Reliable and Rugged SOP-8 Package ( 5,6,7,8 ) L
apm4240k.pdf
APM4240KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 25V/15A,DDDRDS(ON)=4.5m(typ.) @ VGS=10VRDS(ON)=6.5m(typ.) @ VGS=4.5VSS Super High Dense Cell DesignSG Avalanche Rated Reliable and Rugged Top View of SOP - 8 SOP-8 Package ( 5,6,7,8 ) Lea
apm4220.pdf
APM4220N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/14A, RDS(ON)=7.5m(typ.) @ VGS=10VS 1 8 DRDS(ON)=10m(typ.) @ VGS=4.5VS 2 7 D Super High Dense Cell Design forS 3 6 DExtremely Low RDS(ON)G 45 D Reliable and Rugged SOP-8 Package SO - 8DApplications Power Management i
apm4210k.pdf
APM4210K N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 25V/10A, DDRDS(ON) = 9m(typ.) @ VGS = 10V D RDS(ON) = 15m(typ.) @ VGS = 4.5VSS Super High Density Cell Design SG Avalanche Rated SOP - 8 Reliable and Rugged SOP-8 Package ( 5,6,7,8 )D D D
apm4220k.pdf
APM4220KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 25V/12A,DDDRDS(ON)=7.5m(typ.) @ VGS=10VRDS(ON)=10m(typ.) @ VGS=4.5VSS Super High Dense Cell DesignSG Avalanche RatedTop View of SOP - 8 Reliable and Rugged SOP-8 Package( 5,6,7,8 ) Lead
apm4220ka.pdf
APM4220KAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD8D7 25V/16A,D6D5 RDS(ON)=7.5m(typ.) @ VGS=10VS1 RDS(ON)=10m(typ.) @ VGS=4.5VS2S3 Super High Dense Cell DesignG4 Avalanche Rated SOP-8 Exposed Reliable and Rugged = Thermal Pad Thermal Pad Exposed with Standard SOP-8 (connected to Drain plane for better heat Outlinedissipation)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SI2329DS | SS07N70 | MTP15N06LFI
History: SI2329DS | SS07N70 | MTP15N06LFI
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