All MOSFET. IRF3415L Datasheet

 

IRF3415L MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3415L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 43 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 133.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm

Package: TO262

IRF3415L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF3415L Datasheet (PDF)

0.1. irf3415spbf irf3415lpbf.pdf Size:1066K _international_rectifier

IRF3415L
IRF3415L

PD - 95112IRF3415S/LPbF Lead-Freewww.irf.com 13/16/04IRF3415S/LPbF2 www.irf.comIRF3415S/LPbFwww.irf.com 3IRF3415S/LPbF4 www.irf.comIRF3415S/LPbFwww.irf.com 5IRF3415S/LPbF6 www.irf.comIRF3415S/LPbFwww.irf.com 7IRF3415S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free) I I I I I I

0.2. irf3415l.pdf Size:255K _inchange_semiconductor

IRF3415L
IRF3415L

Isc N-Channel MOSFET Transistor IRF3415LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150

 7.1. irf3415s.pdf Size:156K _international_rectifier

IRF3415L
IRF3415L

PD - 91509CIRF3415S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 150V Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175C Operating TemperatureRDS(on) = 0.042 Fast SwitchingG Fully Avalanche RatedID = 43ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

7.2. irf3415.pdf Size:94K _international_rectifier

IRF3415L
IRF3415L

PD - 91477DIRF3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenef

 7.3. irf3415pbf.pdf Size:203K _international_rectifier

IRF3415L
IRF3415L

IRF3415PbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Lead-Free GDescription S

7.4. irf3415s.pdf Size:257K _inchange_semiconductor

IRF3415L
IRF3415L

Isc N-Channel MOSFET Transistor IRF3415SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 7.5. irf3415.pdf Size:244K _inchange_semiconductor

IRF3415L
IRF3415L

isc N-Channel MOSFET Transistor IRF3415IIRF3415FEATURESStatic drain-source on-resistance:RDS(on) 42mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONCombine with the fast switching speed and ruggedized device designABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , 2N3824 , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF430 .

 

 
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