All MOSFET. APM4532K Datasheet

 

APM4532K MOSFET. Datasheet pdf. Equivalent


   Type Designator: APM4532K
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5(3.5) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045(0.095) Ohm
   Package: SOP8

 APM4532K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APM4532K Datasheet (PDF)

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 apm4532k.pdf

APM4532K APM4532K

APM4532KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelD1D1D230V/5A,D2RDS(ON) =35m(typ.) @ VGS = 10VS1RDS(ON) =60m(typ.) @ VGS = 4.5VG1S2G2 P-Channel-30V/-3.5A,Top View of SOP - 8RDS(ON) =85m(typ.) @ VGS =-10V(8) (7) (3)RDS(ON) =135m(typ.) @ VGS =-4.5VD1 D1 S2 Super High Dense C

 0.1. Size:1667K  cn vbsemi
 apm4532kc.pdf

APM4532K APM4532K

APM4532KCwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG

 7.1. Size:234K  anpec
 apm4532.pdf

APM4532K APM4532K

APM4532Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelS1 1 8 D130V/5A, RDS(ON)=35m(typ.) @ VGS=10VG1 2 7 D1RDS(ON)=60m(typ.) @ VGS=4.5V S2 3 6 D2G2 4 5 D2 P-Channel-30V/-3.5A, RDS(ON)=85m(typ.) @ VGS=-10VSO-8 RDS(ON)=135m(typ.) @ VGS=-4.5V Super High Dense Cell Design for ExtremelyD1 D1S2Lo

 8.1. Size:180K  anpec
 apm4536k.pdf

APM4532K APM4532K

APM4536KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelD1D130V/5A, D2D2RDS(ON) =35m(typ.) @ VGS = 10VS1RDS(ON) =45m(typ.) @ VGS = 4.5VG1S2 P-ChannelG2-30V/-5A,Top View of SOP - 8RDS(ON) =40m(typ.) @ VGS =-10VRDS(ON) =55m(typ.) @ VGS =-4.5V(8) (7) (3)D1 D1 S2 Super High Dense Cell

 8.2. Size:271K  anpec
 apm4534k.pdf

APM4532K APM4532K

APM4534KDual Enhancement Mode MOSFET (N- and P-Channel)Features Pin Description N-Channel 30V/4.5A RDS(ON) = 65m(typ.) @ VGS = 10V RDS(ON) = 90m(typ.) @ VGS = 4.5V P-Channel-30V/-3.3A, RDS(ON) = 110m(typ.) @ VGS = -10V RDS(ON) = 175m(typ.) @ VGS = -4.5V Top View of SOP - 8 Super High Dense Cell Design(8) (7) (6) (5)D1 D1 D2 D2 Reliable and Rugged Lea

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 apm4538k.pdf

APM4532K APM4532K

APM4538KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-ChannelD1D1D236V/5A,D2RDS(ON) =50m(typ.) @ VGS = 10VS1RDS(ON) =60m(typ.) @ VGS = 4.5VG1S2G2 P-Channel-36V/-4A,Top View of SOP - 8RDS(ON) =60m(typ.) @ VGS =-10V(3)RDS(ON) =80m(typ.) @ VGS =-4.5V (8) (7)S2D1 D1 Super High Dense Cel

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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