APM4812K MOSFET. Datasheet pdf. Equivalent
Type Designator: APM4812K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.5 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOP8
APM4812K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APM4812K Datasheet (PDF)
apm4812k.pdf
APM4812KN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/8A, RDS(ON)= 18m(typ.) @ VGS= 10V RDS(ON)= 26m(typ.) @ VGS= 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)Top View of SOP - 8D D D DApplications Power Management in Notebook Computer,Portable Equipment and Battery PoweredGSystemsS S SN-C
apm4810k.pdf
APM4810KN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/11A, RDS(ON) = 12m(typ.) @ VGS = 10V RDS(ON) =18m(typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)Top View of SOP - 8( 5,6,7,8 )D D D DApplications Power Management in Notebook Computer,(4) Portable Equipment and Battery Powered
apm4820k.pdf
APM4820KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/11A,DDRDS(ON) =12m(Typ.) @ VGS = 10VRDS(ON) =18m(Typ.) @ VGS = 4.5VSS Super High Dense Cell DesignSG Reliable and RuggedSOP-8 Lead Free and Green Devices Available(5,6,7,8)D D D D(RoHS Compliant)Applications(4) G Power Management in Notebook Computer,Portable Equipmen
apm4835.pdf
APM4835 P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-8A, RDS(ON) = 16m(typ.) @ VGS = -10VS 1 8 DRDS(ON) = 24m(typ.) @ VGS = -4.5VS 2 7 D Super High Density Cell DesignS 3 6 D Reliable and RuggedG 45 D SO-8 Package SO - 8ApplicationsS S S Power Management in Notebook
apm4828k.pdf
APM4828KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/12A,DRDS(ON) =12m(Max.) @ VGS =10VSRDS(ON) =18m(Max.) @ VGS =4.5VSS Super High Dense Cell DesignG Avalanche RatedSOP-8 Reliable and Rugged(5,6,7,8)D D D D Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management in Notebook Computer,a
apm4800.pdf
APM4800N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSO-8 30V/8A , RDS(ON)=15m(typ.) @ VGS=10VRDS(ON)=22m(typ.) @ VGS=4.5V S 1 8 D Super High Dense Cell Design for ExtremelyS 2 7 DLow RDS(ON)S 3 6 D Reliable and RuggedG 45 D SO-8 PackageTop ViewDApplications Power Manageme
apm4826k.pdf
APM4826KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/11A,DDRDS(ON) =9.5m(Typ.) @ VGS = 10VRDS(ON) =13.5m(Typ.) @ VGS = 4.5VSS Super High Dense Cell DesignSG Avalanche RatedSOP-8 Reliable and Rugged(5,6,7,8)D D D D Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Computer
apm4804k.pdf
APM4804K N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 30V/8A,DDDRDS(ON) = 17m(typ.) @ VGS = 10V RDS(ON) = 22m(typ.) @ VGS = 4.5VSS Super High Density Cell DesignSG Reliable and Rugged SOP - 8 SOP-8 Package D D D D Lead Free Available (RoHS Compliant) Appl
apm4828kc-trl.pdf
APM4828KC-TRLwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switc
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918