All MOSFET. IRF3515S Datasheet

 

IRF3515S MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3515S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 41 A

Maximum Junction Temperature (Tj): 150 ┬░C

Drain-Source Capacitance (Cd): 2260 pF

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: D2PAK

IRF3515S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF3515S Datasheet (PDF)

1.1. irf3515s.pdf Size:126K _international_rectifier

IRF3515S
IRF3515S

PD- 91899B IRF3515S SMPS MOSFET IRF3515L HEXFET« Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045? 41A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Cu

5.1. irf350.pdf Size:341K _st2

IRF3515S
IRF3515S

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5.2. 2n6768_irf350.pdf Size:144K _international_rectifier

IRF3515S
IRF3515S

PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET?TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300? 14A The HEXFET?technology is the key to International Rectifierĺs advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

Datasheet: IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , 2SK2611 , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 .

 


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