IRF3515S Datasheet. Specs and Replacement
Type Designator: IRF3515S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 41 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 530 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO263
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IRF3515S substitution
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IRF3515S datasheet
irf3515s.pdf
PD- 91899B IRF3515S SMPS MOSFET IRF3515L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045 41A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage ... See More ⇒
irf3515l.pdf
PD- 91899B IRF3515S SMPS MOSFET IRF3515L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045 41A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage ... See More ⇒
2n6768 irf350.pdf
PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒
Detailed specifications: IRF3315, IRF3315L, IRF3315S, IRF340, IRF3415, IRF3415L, IRF3415S, IRF350, 8N60, IRF360, IRF3710, IRF3710L, IRF3710S, IRF430, IRF440, IRF450, IRF451
Keywords - IRF3515S MOSFET specs
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