APM9410 MOSFET Datasheet: N-Ch, 30V, 8A. Full specification with pinout and replacement list

APM9410 Specs and Replacement

Type Designator: APM9410

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SO8

APM9410 substitution

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APM9410 datasheet

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APM9410 N-Channel Enhancement Mode MOSFET Features Pin Description SO-8 30V/8A , RDS(ON)=15m (typ.) @ VGS=10V RDS(ON)=23m (typ.) @ VGS=4.5V S 1 8 D Super High Dense Cell Design for Extremely S 2 7 D Low RDS(ON) S 3 6 D Reliable and Rugged G 45 D SO-8 Package Top View D Applications Power Managem... See More ⇒

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apm9430.pdf pdf_icon

APM9430 N-Channel Enhancement Mode MOSFET Features Pin Description 20V/4A, RDS(ON) = 40m (typ.) @ VGS = 4.5V S 1 8 D RDS(ON) = 110m (typ.) @ VGS = 2.5V S 2 7 D Super High Density Cell Design S 3 6 D Reliable and Rugged G 45 D SO-8 Package SO - 8 D D D D Applications Power Management in Notebook... See More ⇒

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APM9435 P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4.6A, RDS(ON) = 52m (typ.) @ VGS = -10V S 1 8 D RDS(ON) = 80m (typ.) @ VGS = -4.5V S 2 7 D Super High Density Cell Design S 3 6 D Reliable and Rugged G 45 D SO-8 Package SO - 8 Applications S S S Power Management in Noteboo... See More ⇒