APM9424
MOSFET. Datasheet pdf. Equivalent
Type Designator: APM9424
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 80
nS
Cossⓘ -
Output Capacitance: 720
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013
Ohm
Package:
SO8
APM9424
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APM9424
Datasheet (PDF)
..1. Size:162K anpec
apm9424.pdf 
APM9424 N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/10A, RDS(ON) = 10m(typ.) @ VGS = 4.5VS 1 8 D RDS(ON) = 15m(typ.) @ VGS = 2.5VS 2 7 D Super High Density Cell DesignS 3 6 D Reliable and RuggedG 45 D SO-8 Package SO - 8D D D DApplications Power Management in Notebook
0.1. Size:138K anpec
apm9424k.pdf
APM9424KN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 20V/10A,DDDRDS(ON)=10m(typ.) @ VGS=4.5VRDS(ON)=15m(typ.) @ VGS=2.5VSS Super High Dense Cell DesignSG Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)( 5,6,7,8 )D D D DApplications
8.1. Size:155K anpec
apm9428k.pdf
APM9428K N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 20V/6A ,DDDRDS(ON)=25m(typ.) @ VGS=4.5V RDS(ON)=50m(typ.) @ VGS=2.5VSS Super High Dense Cell DesignSG Reliable and Rugged Lead Free Available (RoHS Compliant)Top View of SOP - 8( 5,6,7,8 )D D D DApplications
9.1. Size:157K anpec
apm9430.pdf
APM9430 N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A, RDS(ON) = 40m(typ.) @ VGS = 4.5VS 1 8 D RDS(ON) = 110m(typ.) @ VGS = 2.5VS 2 7 D Super High Density Cell DesignS 3 6 D Reliable and RuggedG 45 D SO-8 Package SO - 8D D D DApplications Power Management in Notebook
9.2. Size:154K anpec
apm9435.pdf
APM9435 P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4.6A, RDS(ON) = 52m(typ.) @ VGS = -10VS 1 8 DRDS(ON) = 80m(typ.) @ VGS = -4.5VS 2 7 D Super High Density Cell DesignS 3 6 D Reliable and RuggedG 45 D SO-8 Package SO - 8ApplicationsS S S Power Management in Noteboo
9.3. Size:169K anpec
apm9410k.pdf
APM9410N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSO-8 30V/8A , RDS(ON)=15m(typ.) @ VGS=10VRDS(ON)=23m(typ.) @ VGS=4.5VS 1 8 D Super High Dense Cell Design for ExtremelyS 2 7 DLow RDS(ON)S 3 6 D Reliable and RuggedG 45 D SO-8 PackageTop ViewDApplications Power Managem
9.4. Size:513K anpec
apm9435k.pdf
APM9435K P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD -30V/-4.6A , DD RDS(ON)=52m(typ.) @ VGS=-10V RDS(ON)=80m(typ.) @ VGS=-4.5VSS Super High Dense Cell DesignSG Reliable and RuggedTop View of SOP - 8 Lead Free and Green Devices Available (RoHS Compliant)( 1, 2, 3 )S S SApplications(4) Power Management in Notebook Computer,
9.5. Size:141K anpec
apm9430k.pdf
APM9430K N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/4A , DDDRDS(ON)=40m(typ.) @ VGS=4.5VDRDS(ON)=110m(typ.) @ VGS=2.5VSS Super High Dense Cell DesignSG Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)( 5,6,7,8 )D D D DApplications
9.6. Size:176K anpec
apm9410.pdf
APM9410N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSO-8 30V/8A , RDS(ON)=15m(typ.) @ VGS=10VRDS(ON)=23m(typ.) @ VGS=4.5VS 1 8 D Super High Dense Cell Design for ExtremelyS 2 7 DLow RDS(ON)S 3 6 D Reliable and RuggedG 45 D SO-8 PackageTop ViewDApplications Power Managem
9.7. Size:1488K kexin
apm9435k.pdf
SMD Type MOSFETP-Channel MOSFETAPM9435K (APM9435KC)SOP-8 Features VDS (V) =-30V ID =-4.6 A (VGS =-10V)1.50 0.15 RDS(ON) 52m (VGS =-10V) RDS(ON) 80m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source47 Drain3 SourceG8 Drain4 Gate5 162738 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vo
9.8. Size:805K cn vbsemi
apm9435kc.pdf
APM9435KCwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
