APM9948J MOSFET. Datasheet pdf. Equivalent
Type Designator: APM9948J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.2 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 47 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: DIP8
APM9948J Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APM9948J Datasheet (PDF)
apm9948j.pdf
APM9948JDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 60V/4A,D2RDS(ON) = 60m(typ.) @ VGS = 10VRDS(ON) = 72m(typ.) @ VGS = 4.5V S1G1S2 Super High Dense Cell DesignG2 Reliable and RuggedTop View of DIP-8 Lead Free and Green Devices are Available(RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Manage
apm9948k.pdf
APM9948KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 60V/4A,DDRDS(ON) = 60m(typ.) @ VGS = 10VRDS(ON) = 72m(typ.) @ VGS = 4.5VS Super High Dense Cell Design GS Reliable and Rugged GTop View of SOP - 8 Lead Free and Green Devices Available(RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Management in DC/
apm9946k.pdf
APM9946KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/5A,RDS(ON) =38m(typ.) @ VGS = 10VRDS(ON) =55m(typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4) Power Management in DC/DC Converter,G1 G2DC/AC Inverter Systems.S1
apm9946j.pdf
APM9946JDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/6A,RDS(ON) =38m (typ.) @ VGS = 10VRDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of DIP - 8 Lead Free Available (RoHS Compliant)(6) (5)(8) (7)D2 D2D1 D1Applications(2) (4) Power Management in DC/DC Converter,G1 G2DC/AC Inverter SystemsS
apm9945k.pdf
APM9945KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/3A, D1D1D2RDS(ON) =100m(typ.) @ VGS = 10VD2RDS(ON) =120m(typ.) @ VGS = 4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8(7) (8) (5) (6)D1 D1 D2 D2App
apm9945kc.pdf
APM9945KCwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918