APM9953 Datasheet and Replacement

APM9953P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3A , RDS(ON)=75m(typ.) @ VGS=-10VS1 1 8 D1 RDS(ON)=90m(typ.) @ VGS=-4.5VG1 2 7 D1 Super High Dense Cell Design for ExtremelyS2 3 6 D2Low RDS(ON)G2 45 D2 Reliable and Rugged SOP-8 Package SO - 8S1 S2ApplicationsG1 G2

APM9953KDual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 -20V/-3A ,D1D2D2RDS(ON)=76m(typ.) @ VGS=-10VRDS(ON)=93m(typ.) @ VGS=-4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(1) (3)S1 S2Applicat

APM9950KDual N-Channel Enhancement Mode MOSFETFeatures Pin ConfigurationD1D1 60V/8A,D2D2RDS(ON)=18.5m (typ.) @ VGS=10VRDS(ON)=26m (typ.) @ VGS=4.5VS1G1 Super High Dense Cell Design S2G2 Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available(8) (7) (6) (5)D1 D1 D2 D2(RoHS Compliant)Applications(2) (4)G1 G2 Power Management i

APM9988QADual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,8 D1S1 1RDS(ON)= 14m(typ.) @ VGS= 4.5V7 D1G1 2RDS(ON)= 15m(typ.) @ VGS= 4VD2S2 3 6RDS(ON)= 17m(typ.) @ VGS= 3VG2 4 5 D2RDS(ON)= 19m(typ.) @ VGS= 2.5V Super High Dense Cell Design Top View of DFN3x3-8A Reliable and Rugged Lead Free and Green Devices Available(8) (7)

APM9966CODual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON) =20m(typ.) @ VGS =4.5V RDS(ON) =25m(typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)Top View of TSSOP - 8(1) (8)D1 D2Applications(5)(4)G1 G2 P

APM9926/CN-Channel Enhancement Mode MOSFETFeatures Applications 20V/6A , RDS(ON)=28m(typ.) @ VGS=4.5V Power Management in Notebook Computer ,RDS(ON)=38m(typ.) @ VGS=2.5V Portable Equipment and Battery PoweredSystems. Super High Dense Cell Design for ExtremelyLow RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages

APM9948KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 60V/4A,DDRDS(ON) = 60m(typ.) @ VGS = 10VRDS(ON) = 72m(typ.) @ VGS = 4.5VS Super High Dense Cell Design GS Reliable and Rugged GTop View of SOP - 8 Lead Free and Green Devices Available(RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Management in DC/

APM9934KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD N-ChannelDDD20V/9A,RDS(ON) =15m (typ.) @ VGS = 4.5VS1G1RDS(ON) =22m (typ.) @ VGS = 2.5VS2G2 P-ChannelTop View of SOP - 8-20V/-6A,RDS(ON) =35m (typ.) @ VGS =-4.5V(3)(8) (7)RDS(ON) =45m (typ.) @ VGS =-2.5VS2D1 D1 Super High Dense Cell Design Reliable and Ru

APM9904KDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 30V/8A,D1D2RDS(ON) =20m(typ.) @ VGS = 10VD2 RDS(ON) =25m(typ.) @ VGS = 4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8(7) (8) (5) (6)D1 D1 D2 D2App

APM9946KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/5A,RDS(ON) =38m(typ.) @ VGS = 10VRDS(ON) =55m(typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4) Power Management in DC/DC Converter,G1 G2DC/AC Inverter Systems.S1

APM9932CKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD N-ChannelDD20V/9A,DRDS(ON) =12m(typ.) @ VGS = 4.5VS1RDS(ON) =18m(typ.) @ VGS = 2.5V G1S2G2 P-Channel-20V/-6A,Top View of SOP - 8RDS(ON) =30m(typ.) @ VGS =-4.5V(8) (7) (6) (5)RDS(ON) =50m(typ.) @ VGS =-2.5VD1 D1D2 D2 Super High Dens

APM9928Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel5 & , 20V/5A , RDS(ON)=35m(typ.) @ VGS=4.5V/ % , RDS(ON)=50m(typ.) @ VGS=3.0V 5 ! $ , / " # , P-Channel-20V/-3.2A , RDS(ON)=80m(typ.) @ VGS=-4.5VSO-8RDS(ON)=120m(typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely LowD1 D1 S2RDS

APM9933KDual P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-3.4A , RDS(ON)=45m(typ.) @ VGS=-4.5V RDS(ON)=52m(typ.) @ VGS=-3V RDS(ON)=60m(typ.) @ VGS=-2.7V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(1) (3)S1 S2Applications(2) (4) Power Management in Notebook Computer,G1 G

APM9968CN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=16m(typ.) @ VGS=4.5V D 1 8 DS1 2 7 S2RDS(ON)=20m(typ.) @ VGS=2.5VS1 3 6 S2 Super High Dense Cell Design for Extremely G1 4 5 G2Low RDS(ON) Reliable and RuggedTSSOP-8 TSSOP-8 PackagesD DApplicationsG1 G2

APM9966/CDual N-Channel Enhancement Mode MOSFETFeatures Applications SOP-8 Power Management in Notebook Computer ,20V/6A , RDS(ON)=19m(typ.) @ VGS=4.5V Portable Equipment and Battery PoweredRDS(ON)=27m(typ.) @ VGS=2.5V Systems.TSSOP-820V/6A , RDS(ON)=21m(typ.) @ VGS=4.5VRDS(ON)=29m(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely

APM9938KDual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1 N-ChannelD1D220V/10A,D2RDS(ON)=13m (typ.) @ VGS=4.5VS1RDS(ON)=22m (typ.) @ VGS=2.5VG1S2 P-ChannelG2-20V/-6A,Top View of SOP-8RDS(ON)=35m (typ.) @ VGS=-4.5VRDS(ON)=45m (typ.) @ VGS=-2.5VS2D1 D1 Super High Dense Cell Design Reliable and Rugged Lead Free and

APM9936KDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel20V/6A,RDS(ON) =27m (typ.) @ VGS = 4.5VRDS(ON) =40m (typ.) @ VGS = 2.5V P-ChannelTop View of SOP - 8-20V/-4A,RDS(ON) =60m (typ.) @ VGS =-4.5V(8) (7) (5) (6)RDS(ON) =85m (typ.) @ VGS =-2.5VD1 D1 D2 D2 Super High Dense Cell Design Reliable and Rugged Lead Free Availa

APM9984CCGN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A ,RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=19m(typ.) @ VGS=2.5V Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating : 2KV HBM(8) (7) (6) (5) Lead Free Available (RoHS Compliant)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Management in Notebook Computer,Portabl

APM9926AKDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON) =28m (typ.) @ VGS =4.5VRDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1D2 D2Applications Power Management in Portable Equipment andBattery Powered Systems (2) (4)G1

APM9988CODual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=19m(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating : 2KV HBMTop View of TSSOP - 8 Lead Free Available (RoHS Compliant)(1) (8)D DApplications Power Management in Notebook Computer, (4) (5)G1G2Portable Equipment an

APM9968CODual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A , RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=20m(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON) Reliable and Rugged TSSOP-8 PackagesTop View of TSSOP - 8 Lead Free Available (RoHS Compliant)

APM9926CCGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description8 20V/5A , RDS(ON)=25m(typ.) @ VGS=4.5V765 RDS(ON)=34m(typ.) @ VGS=2.5V12 Super High Dense Cell Design34 Reliable and Rugged Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1D2 D2Applications Power Management in Notebook Computer, Por-table Equipment and Battery Powe

APM9922KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A, RDS(ON) =28m(typ.) @ VGS =4.5V RDS(ON) =34m(typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1D2 D2Applications Power Management in Notebook Computer, Portable Equipment and B

APM9986CODual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON)=16m(typ.) @ VGS=4.5VRDS(ON)=19m(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating : 2KV HBMTop View of TSSOP - 8 Lead Free Available (RoHS Compliant)(1) (8)D DApplications Power Management in Notebook Computer,(4) (5)G1 G2Portable Equipment an

APM9935KDual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 -20V/-6A ,D1D2D2RDS(ON)=30m(typ.) @ VGS=-4.5VRDS(ON)=38m(typ.) @ VGS=-2.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(1) (3)S1 S2Applica

APM9946JDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/6A,RDS(ON) =38m (typ.) @ VGS = 10VRDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of DIP - 8 Lead Free Available (RoHS Compliant)(6) (5)(8) (7)D2 D2D1 D1Applications(2) (4) Power Management in DC/DC Converter,G1 G2DC/AC Inverter SystemsS

APM9930/CDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionAPM9930CAPM9930 N-ChannelS1 1 8 DS1 1 8 D120V/15A, RDS(ON)=12m(typ.) @ VGS=10VG1 2 7 DG1 2 7 D1RDS(ON)=17m(typ.) @ VGS=4.5VS2 3 6 DS2 3 6 D2RDS(ON)=25m(typ.) @ VGS=2.5VG2 4 5 DG2 4 5 D2 P-Channel-20V/-5A, RDS(ON)=60m(typ.) @ VGS=-10VSO-8SO-8RDS(ON)=72m(ty

APM9933Dual P-Channel Enhancement Mode MOSFETPin DescriptionFeatures -20V/-3.5A , RDS(ON)=45m(typ.) @ VGS=-4.5VS1 1 8 D1-2.9A , RDS(ON)=52m(typ.) @ VGS=-3.0VG1 2 7 D1-2.6A , RDS(ON)=60m(typ.) @ VGS=-2.7VS2 3 6 D2 Super High Dense Cell Design for ExtremelyG2 45 D2Low RDS(ON) Reliable and Rugged SOP - 8 SOP

APM9945KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/3A, D1D1D2RDS(ON) =100m(typ.) @ VGS = 10VD2RDS(ON) =120m(typ.) @ VGS = 4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8(7) (8) (5) (6)D1 D1 D2 D2App

APM9926KDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,RDS(ON) =28m (typ.) @ VGS = 4.5VRDS(ON) =38m (typ.) @ VGS = 2.5V Super High Dense Cell Design Reliable and RuggedTop View of SOP - 8 Lead Free Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4) Power Management in Notebook Computer,G1 G2Portable Equipment and

APM9948JDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 60V/4A,D2RDS(ON) = 60m(typ.) @ VGS = 10VRDS(ON) = 72m(typ.) @ VGS = 4.5V S1G1S2 Super High Dense Cell DesignG2 Reliable and RuggedTop View of DIP-8 Lead Free and Green Devices are Available(RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications(2) (4)G1 G2 Power Manage

APM9926/CN-Channel Enhancement Mode MOSFETFeatures Applications 20V/6A , RDS(ON)=28m(typ.) @ VGS=4.5V Power Management in Notebook Computer ,RDS(ON)=38m(typ.) @ VGS=2.5V Portable Equipment and Battery PoweredSystems. Super High Dense Cell Design for ExtremelyLow RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages

APM9966/CDual N-Channel Enhancement Mode MOSFETFeatures Applications SOP-8 Power Management in Notebook Computer ,20V/6A , RDS(ON)=19m(typ.) @ VGS=4.5V Portable Equipment and Battery PoweredRDS(ON)=27m(typ.) @ VGS=2.5V Systems.TSSOP-820V/6A , RDS(ON)=21m(typ.) @ VGS=4.5VRDS(ON)=29m(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely

APM9928Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N-Channel5 & , 20V/5A , RDS(ON)=35m(typ.) @ VGS=4.5V/ % , RDS(ON)=50m(typ.) @ VGS=3.0V 5 ! $ , / " # , P-Channel-20V/-3.2A , RDS(ON)=80m(typ.) @ VGS=-4.5VSO-8RDS(ON)=120m(typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely LowD1 D1 S2RDS

APM9988QBDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/8A,S2S2RDS(ON)=17.5m (Max.) @ VGS=4.5VG2RDS(ON)=18.5m (Max.) @ VGS=4VRDS(ON)=22m (Max.) @ VGS=3.1VS1S1RDS(ON)=27.5m (Max.) @ VGS=2.5VG1 Reliable and RuggedTop View of TDFN2x5-6 Lead Free and Green Devices Available(RoHS Compliant)D D(3) (4)G1G2Applications Power Manageme

APM9988QGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/8A,S2S2RDS(ON)= 17.5m (Max.) @ VGS=4.5VG2RDS(ON)= 18.5m (Max.) @ VGS=4VS1RDS(ON)= 22m (Max.) @ VGS=3.1VS1G1RDS(ON)= 27.5m (Max.) @ VGS=2.5V Super High Dense Cell DesignTop View of DFN2x5-6 Reliable and Rugged Lead Free and Green Devices AvailableD D(RoHS Compliant)

APM9938KDual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1D1 N-ChannelD2D220V/10A,RDS(ON)=13m (typ.) @ VGS=4.5VS1RDS(ON)=22m (typ.) @ VGS=2.5VG1S2G2 P-Channel-20V/-6A,Top View of SOP-8RDS(ON)=35m (typ.) @ VGS=-4.5VS2D1 D1RDS(ON)=45m (typ.) @ VGS=-2.5V Reliable and Rugged Lead Free and Green Devices Available(RoHS Complia

APM9945KCwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe