APM9953 Specs and Replacement
Type Designator: APM9953
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ -
Output Capacitance: 118 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SO8
- MOSFET ⓘ Cross-Reference Search
APM9953 datasheet
..1. Size:253K anpec
apm9953.pdf 
APM9953 P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3A , RDS(ON)=75m (typ.) @ VGS=-10V S1 1 8 D1 RDS(ON)=90m (typ.) @ VGS=-4.5V G1 2 7 D1 Super High Dense Cell Design for Extremely S2 3 6 D2 Low RDS(ON) G2 45 D2 Reliable and Rugged SOP-8 Package SO - 8 S1 S2 Applications G1 G2 ... See More ⇒
0.1. Size:138K anpec
apm9953k.pdf
APM9953K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 -20V/-3A , D1 D2 D2 RDS(ON)=76m (typ.) @ VGS=-10V RDS(ON)=93m (typ.) @ VGS=-4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (1) (3) S1 S2 Applicat... See More ⇒
8.1. Size:232K anpec
apm9950k.pdf
APM9950K Dual N-Channel Enhancement Mode MOSFET Features Pin Configuration D1 D1 60V/8A, D2 D2 RDS(ON)=18.5m (typ.) @ VGS=10V RDS(ON)=26m (typ.) @ VGS=4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (8) (7) (6) (5) D1 D1 D2 D2 (RoHS Compliant) Applications (2) (4) G1 G2 Power Management i... See More ⇒
9.1. Size:219K anpec
apm9988qa.pdf
APM9988QA Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, 8 D1 S1 1 RDS(ON)= 14m (typ.) @ VGS= 4.5V 7 D1 G1 2 RDS(ON)= 15m (typ.) @ VGS= 4V D2 S2 3 6 RDS(ON)= 17m (typ.) @ VGS= 3V G2 4 5 D2 RDS(ON)= 19m (typ.) @ VGS= 2.5V Super High Dense Cell Design Top View of DFN3x3-8A Reliable and Rugged Lead Free and Green Devices Available (8) (7)... See More ⇒
9.2. Size:144K anpec
apm9966co.pdf
APM9966CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =20m (typ.) @ VGS =4.5V RDS(ON) =25m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TSSOP - 8 (1) (8) D1 D2 Applications (5) (4) G1 G2 P... See More ⇒
9.3. Size:165K anpec
apm9926c.pdf
APM9926/C N-Channel Enhancement Mode MOSFET Features Applications 20V/6A , RDS(ON)=28m (typ.) @ VGS=4.5V Power Management in Notebook Computer , RDS(ON)=38m (typ.) @ VGS=2.5V Portable Equipment and Battery Powered Systems. Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages ... See More ⇒
9.4. Size:130K anpec
apm9948k.pdf
APM9948K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D D 60V/4A, D D RDS(ON) = 60m (typ.) @ VGS = 10V RDS(ON) = 72m (typ.) @ VGS = 4.5V S Super High Dense Cell Design G S Reliable and Rugged G Top View of SOP - 8 Lead Free and Green Devices Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Management in DC/... See More ⇒
9.5. Size:258K anpec
apm9934k.pdf
APM9934K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description D N-Channel D D D 20V/9A, RDS(ON) =15m (typ.) @ VGS = 4.5V S1 G1 RDS(ON) =22m (typ.) @ VGS = 2.5V S2 G2 P-Channel Top View of SOP - 8 -20V/-6A, RDS(ON) =35m (typ.) @ VGS =-4.5V (3) (8) (7) RDS(ON) =45m (typ.) @ VGS =-2.5V S2 D1 D1 Super High Dense Cell Design Reliable and Ru... See More ⇒
9.6. Size:153K anpec
apm9904k.pdf
APM9904K Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 30V/8A, D1 D2 RDS(ON) =20m (typ.) @ VGS = 10V D2 RDS(ON) =25m (typ.) @ VGS = 4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8 (7) (8) (5) (6) D1 D1 D2 D2 App... See More ⇒
9.7. Size:202K anpec
apm9946k.pdf
APM9946K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5A, RDS(ON) =38m (typ.) @ VGS = 10V RDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) Power Management in DC/DC Converter, G1 G2 DC/AC Inverter Systems. S1 ... See More ⇒
9.8. Size:177K anpec
apm9932ck.pdf
APM9932CK Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description D N-Channel D D 20V/9A, D RDS(ON) =12m (typ.) @ VGS = 4.5V S1 RDS(ON) =18m (typ.) @ VGS = 2.5V G1 S2 G2 P-Channel -20V/-6A, Top View of SOP - 8 RDS(ON) =30m (typ.) @ VGS =-4.5V (8) (7) (6) (5) RDS(ON) =50m (typ.) @ VGS =-2.5V D1 D1 D2 D2 Super High Dens... See More ⇒
9.9. Size:319K anpec
apm9928k.pdf
APM9928 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 5 & , 20V/5A , RDS(ON)=35m (typ.) @ VGS=4.5V / % , RDS(ON)=50m (typ.) @ VGS=3.0V 5 ! $ , / " # , P-Channel -20V/-3.2A , RDS(ON)=80m (typ.) @ VGS=-4.5V SO-8 RDS(ON)=120m (typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely Low D1 D1 S2 RDS... See More ⇒
9.10. Size:208K anpec
apm9933k.pdf
APM9933K Dual P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3.4A , RDS(ON)=45m (typ.) @ VGS=-4.5V RDS(ON)=52m (typ.) @ VGS=-3V RDS(ON)=60m (typ.) @ VGS=-2.7V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (1) (3) S1 S2 Applications (2) (4) Power Management in Notebook Computer, G1 G... See More ⇒
9.11. Size:166K anpec
apm9968c.pdf
APM9968C N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=16m (typ.) @ VGS=4.5V D 1 8 D S1 2 7 S2 RDS(ON)=20m (typ.) @ VGS=2.5V S1 3 6 S2 Super High Dense Cell Design for Extremely G1 4 5 G2 Low RDS(ON) Reliable and Rugged TSSOP-8 TSSOP-8 Packages D D Applications G1 G2 ... See More ⇒
9.12. Size:193K anpec
apm9966.pdf
APM9966/C Dual N-Channel Enhancement Mode MOSFET Features Applications SOP-8 Power Management in Notebook Computer , 20V/6A , RDS(ON)=19m (typ.) @ VGS=4.5V Portable Equipment and Battery Powered RDS(ON)=27m (typ.) @ VGS=2.5V Systems. TSSOP-8 20V/6A , RDS(ON)=21m (typ.) @ VGS=4.5V RDS(ON)=29m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely ... See More ⇒
9.13. Size:255K anpec
apm9938k.pdf
APM9938K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 N-Channel D1 D2 20V/10A, D2 RDS(ON)=13m (typ.) @ VGS=4.5V S1 RDS(ON)=22m (typ.) @ VGS=2.5V G1 S2 P-Channel G2 -20V/-6A, Top View of SOP-8 RDS(ON)=35m (typ.) @ VGS=-4.5V RDS(ON)=45m (typ.) @ VGS=-2.5V S2 D1 D1 Super High Dense Cell Design Reliable and Rugged Lead Free and... See More ⇒
9.14. Size:264K anpec
apm9936k.pdf
APM9936K Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 20V/6A, RDS(ON) =27m (typ.) @ VGS = 4.5V RDS(ON) =40m (typ.) @ VGS = 2.5V P-Channel Top View of SOP - 8 -20V/-4A, RDS(ON) =60m (typ.) @ VGS =-4.5V (8) (7) (5) (6) RDS(ON) =85m (typ.) @ VGS =-2.5V D1 D1 D2 D2 Super High Dense Cell Design Reliable and Rugged Lead Free Availa... See More ⇒
9.15. Size:206K anpec
apm9984ccg.pdf
APM9984CCG N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=19m (typ.) @ VGS=2.5V Super High Dense Cell Design Top View of JSOT-8 Reliable and Rugged ESD Rating 2KV HBM (8) (7) (6) (5) Lead Free Available (RoHS Compliant) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Management in Notebook Computer, Portabl... See More ⇒
9.16. Size:203K anpec
apm9926ak.pdf
APM9926AK Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS =4.5V RDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Portable Equipment and Battery Powered Systems (2) (4) G1... See More ⇒
9.17. Size:205K anpec
apm9988co.pdf
APM9988CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=19m (typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating 2KV HBM Top View of TSSOP - 8 Lead Free Available (RoHS Compliant) (1) (8) D D Applications Power Management in Notebook Computer, (4) (5) G1 G2 Portable Equipment an... See More ⇒
9.18. Size:142K anpec
apm9968co.pdf
APM9968CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=20m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TSSOP-8 Packages Top View of TSSOP - 8 Lead Free Available (RoHS Compliant) ... See More ⇒
9.19. Size:212K anpec
apm9926ccg.pdf
APM9926CCG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 8 20V/5A , RDS(ON)=25m (typ.) @ VGS=4.5V 7 6 5 RDS(ON)=34m (typ.) @ VGS=2.5V 1 2 Super High Dense Cell Design 3 4 Reliable and Rugged Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Notebook Computer, Por- table Equipment and Battery Powe... See More ⇒
9.20. Size:128K anpec
apm9922k.pdf
APM9922K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS =4.5V RDS(ON) =34m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications Power Management in Notebook Computer, Portable Equipment and B... See More ⇒
9.21. Size:204K anpec
apm9986co.pdf
APM9986CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON)=16m (typ.) @ VGS=4.5V RDS(ON)=19m (typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged ESD Rating 2KV HBM Top View of TSSOP - 8 Lead Free Available (RoHS Compliant) (1) (8) D D Applications Power Management in Notebook Computer, (4) (5) G1 G2 Portable Equipment an... See More ⇒
9.22. Size:136K anpec
apm9935k.pdf
APM9935K Dual P-Channel Enhancement Mode MOSFET Features Pin Description D1 -20V/-6A , D1 D2 D2 RDS(ON)=30m (typ.) @ VGS=-4.5V RDS(ON)=38m (typ.) @ VGS=-2.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (1) (3) S1 S2 Applica... See More ⇒
9.23. Size:180K anpec
apm9946j.pdf
APM9946J Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/6A, RDS(ON) =38m (typ.) @ VGS = 10V RDS(ON) =55m (typ.) @ VGS = 4.5V Super High Dense Cell Design Reliable and Rugged Top View of DIP - 8 Lead Free Available (RoHS Compliant) (6) (5) (8) (7) D2 D2 D1 D1 Applications (2) (4) Power Management in DC/DC Converter, G1 G2 DC/AC Inverter Systems S... See More ⇒
9.24. Size:243K anpec
apm9930.pdf
APM9930/C Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description APM9930C APM9930 N-Channel S1 1 8 D S1 1 8 D1 20V/15A, RDS(ON)=12m (typ.) @ VGS=10V G1 2 7 D G1 2 7 D1 RDS(ON)=17m (typ.) @ VGS=4.5V S2 3 6 D S2 3 6 D2 RDS(ON)=25m (typ.) @ VGS=2.5V G2 4 5 D G2 4 5 D2 P-Channel -20V/-5A, RDS(ON)=60m (typ.) @ VGS=-10V SO-8 SO-8 RDS(ON)=72m (ty... See More ⇒
9.25. Size:144K anpec
apm9933.pdf
APM9933 Dual P-Channel Enhancement Mode MOSFET Pin Description Features -20V/-3.5A , RDS(ON)=45m (typ.) @ VGS=-4.5V S1 1 8 D1 -2.9A , RDS(ON)=52m (typ.) @ VGS=-3.0V G1 2 7 D1 -2.6A , RDS(ON)=60m (typ.) @ VGS=-2.7V S2 3 6 D2 Super High Dense Cell Design for Extremely G2 45 D2 Low RDS(ON) Reliable and Rugged SOP - 8 SOP... See More ⇒
9.26. Size:110K anpec
apm9945k.pdf
APM9945K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/3A, D1 D1 D2 RDS(ON) =100m (typ.) @ VGS = 10V D2 RDS(ON) =120m (typ.) @ VGS = 4.5V S1 G1 Super High Dense Cell Design S2 G2 Reliable and Rugged Lead Free Available (RoHS Compliant) SOP - 8 (7) (8) (5) (6) D1 D1 D2 D2 App... See More ⇒
9.27. Size:204K anpec
apm9926k.pdf
APM9926K Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =28m (typ.) @ VGS = 4.5V RDS(ON) =38m (typ.) @ VGS = 2.5V Super High Dense Cell Design Reliable and Rugged Top View of SOP - 8 Lead Free Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) Power Management in Notebook Computer, G1 G2 Portable Equipment and ... See More ⇒
9.28. Size:173K anpec
apm9948j.pdf
APM9948J Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 D2 60V/4A, D2 RDS(ON) = 60m (typ.) @ VGS = 10V RDS(ON) = 72m (typ.) @ VGS = 4.5V S1 G1 S2 Super High Dense Cell Design G2 Reliable and Rugged Top View of DIP-8 Lead Free and Green Devices are Available (RoHS Compliant) (8) (7) (6) (5) D1 D1 D2 D2 Applications (2) (4) G1 G2 Power Manage... See More ⇒
9.29. Size:180K anpec
apm9926.pdf
APM9926/C N-Channel Enhancement Mode MOSFET Features Applications 20V/6A , RDS(ON)=28m (typ.) @ VGS=4.5V Power Management in Notebook Computer , RDS(ON)=38m (typ.) @ VGS=2.5V Portable Equipment and Battery Powered Systems. Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 and TSSOP-8 Packages ... See More ⇒
9.30. Size:177K anpec
apm9966c.pdf
APM9966/C Dual N-Channel Enhancement Mode MOSFET Features Applications SOP-8 Power Management in Notebook Computer , 20V/6A , RDS(ON)=19m (typ.) @ VGS=4.5V Portable Equipment and Battery Powered RDS(ON)=27m (typ.) @ VGS=2.5V Systems. TSSOP-8 20V/6A , RDS(ON)=21m (typ.) @ VGS=4.5V RDS(ON)=29m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely ... See More ⇒
9.31. Size:338K anpec
apm9928.pdf
APM9928 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 5 & , 20V/5A , RDS(ON)=35m (typ.) @ VGS=4.5V / % , RDS(ON)=50m (typ.) @ VGS=3.0V 5 ! $ , / " # , P-Channel -20V/-3.2A , RDS(ON)=80m (typ.) @ VGS=-4.5V SO-8 RDS(ON)=120m (typ.) @ VGS=-3.0V Super High Dense Cell Design for Extremely Low D1 D1 S2 RDS... See More ⇒
9.32. Size:268K sino
apm9988qb.pdf
APM9988QB Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/8A, S2 S2 RDS(ON)=17.5m (Max.) @ VGS=4.5V G2 RDS(ON)=18.5m (Max.) @ VGS=4V RDS(ON)=22m (Max.) @ VGS=3.1V S1 S1 RDS(ON)=27.5m (Max.) @ VGS=2.5V G1 Reliable and Rugged Top View of TDFN2x5-6 Lead Free and Green Devices Available (RoHS Compliant) D D (3) (4) G1 G2 Applications Power Manageme... See More ⇒
9.33. Size:343K sino
apm9988qg.pdf
APM9988QG Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/8A, S2 S2 RDS(ON)= 17.5m (Max.) @ VGS=4.5V G2 RDS(ON)= 18.5m (Max.) @ VGS=4V S1 RDS(ON)= 22m (Max.) @ VGS=3.1V S1 G1 RDS(ON)= 27.5m (Max.) @ VGS=2.5V Super High Dense Cell Design Top View of DFN2x5-6 Reliable and Rugged Lead Free and Green Devices Available D D (RoHS Compliant) ... See More ⇒
9.34. Size:300K sino
apm9938k.pdf
APM9938K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 D1 N-Channel D2 D2 20V/10A, RDS(ON)=13m (typ.) @ VGS=4.5V S1 RDS(ON)=22m (typ.) @ VGS=2.5V G1 S2 G2 P-Channel -20V/-6A, Top View of SOP-8 RDS(ON)=35m (typ.) @ VGS=-4.5V S2 D1 D1 RDS(ON)=45m (typ.) @ VGS=-2.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Complia... See More ⇒
9.35. Size:1514K cn vbsemi
apm9945kc.pdf
APM9945KC www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channe... See More ⇒
Detailed specifications: APM9936K, 2SK3082S, APM9945K, APM9946J, APM9946K, APM9948J, APM9948K, APM9950K, IRFP460, APM9953K, APM9966, APM9966C, APM9966CO, APM9968C, APM9968CO, APM9984CCG, APM9986CO
Keywords - APM9953 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
