APM9966C MOSFET Datasheet: N-Ch, 20V, 6A. Full specification with pinout and replacement list

APM9966C Specs and Replacement

Type Designator: APM9966C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: SO8

APM9966C substitution

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APM9966C datasheet

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APM9966/C Dual N-Channel Enhancement Mode MOSFET Features Applications SOP-8 Power Management in Notebook Computer , 20V/6A , RDS(ON)=19m (typ.) @ VGS=4.5V Portable Equipment and Battery Powered RDS(ON)=27m (typ.) @ VGS=2.5V Systems. TSSOP-8 20V/6A , RDS(ON)=21m (typ.) @ VGS=4.5V RDS(ON)=29m (typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely ... See More ⇒

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APM9966CO Dual N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, RDS(ON) =20m (typ.) @ VGS =4.5V RDS(ON) =25m (typ.) @ VGS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TSSOP - 8 (1) (8) D1 D2 Applications (5) (4) G1 G2 P... See More ⇒

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APM9968C N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , RDS(ON)=16m (typ.) @ VGS=4.5V D 1 8 D S1 2 7 S2 RDS(ON)=20m (typ.) @ VGS=2.5V S1 3 6 S2 Super High Dense Cell Design for Extremely G1 4 5 G2 Low RDS(ON) Reliable and Rugged TSSOP-8 TSSOP-8 Packages D D Applications G1 G2 ... See More ⇒