IRF453 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF453
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 120(max) nC
trⓘ - Rise Time: 50(max) nS
Cossⓘ - Output Capacitance: 600(max) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO3
IRF453 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF453 Datasheet (PDF)
2n6770 irf450.pdf
PD - 90330FREPETITIVE AVALANCHE AND dv/dt RATED IRF450HEXFETTRANSISTORS JANTX2N6770THRU-HOLE (TO-204AA/AE) JANTXV2N6770500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF450 500V 0.400 12AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestS
irf450.pdf
IRF450Data Sheet March 1999 File Number 1827.313A, 500V, 0.400 Ohm, N-Channel FeaturesPower MOSFET 13A, 500VThis N-Channel enhancement mode silicon gate power field rDS(ON) = 0.400effect transistor is an advanced power MOSFET designed, Single Pulse Avalanche Energy Ratedtested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mode
irf450b irf450c.pdf
RoHS IRF450 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET14A, 500VoltsDESCRIPTIOND The Nell IRF450 is a three-terminal silicon devicewith current conduction capability of 14A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G
Datasheet: IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , 60N06 , IRF460 , IRF4905 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 .
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