FDN338 PDF and Equivalents Search

 ..1. Size:1818K  shenzhen
 fdn338.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd FDN338 FDN338 P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SOT-23 P-Channel logic level enhancement mode -1.6 A, -20 V, RDS(ON) = 0.115 @ VGS = -4.5 V power field effect transistors are produced using Fairchild's RDS(ON) = 0.155 @ VGS = -2.5 V. proprietary, high cell density, ... See More ⇒

 0.1. Size:267K  fairchild semi
 fdn338p.pdf

September 2001 FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GS Fairchild s advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GS It has been optimized for battery power management applications. Fast switchi... See More ⇒

 0.2. Size:321K  onsemi
 fdn338p.pdf

November 2013 FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 1.6 A, 20 V. R = 115 m @ V = 4.5 V DS(ON) GS Fairchild s advanced low voltage PowerTrench process. R = 155 m @ V = 2.5 V DS(ON) GS It has been optimized for battery power management applications. Fast switching... See More ⇒

 0.3. Size:1909K  htsemi
 fdn338p.pdf

FDN338P 20V P-Channel Enhancement Mode MOSFET VDS= -20V 115m RDS(ON), Vgs@-4.5V, Ids@-1.6A= RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.... See More ⇒

 0.4. Size:596K  umw-ic
 fdn338p.pdf

R UMW UMW FDN338P UMW FDN338P SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET FDN338 SOT 23 ID V(BR)DSS RDS(on)MAX 112m @-4.5V -20V A -2.8 142m @-2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET z z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit 338 Maximum ratings (Ta=25 u... See More ⇒

 0.5. Size:498K  huashuo
 fdn338p.pdf

FDN338P P-Ch 20V Fast Switching MOSFETs Description Product Summary The FDN338P is the high cell density trenched P- VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 89 m and load switch applications. ID -3 A The FDN338P meet the RoHS and Green Product requirement with full function reliability approved. ... See More ⇒

 0.6. Size:714K  cn shikues
 fdn338p.pdf

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 0.7. Size:869K  cn vbsemi
 fdn338p-nl.pdf

FDN338P-NL www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI... See More ⇒

 0.8. Size:1649K  cn tech public
 fdn338p.pdf

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