SI2301A MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2301A
Marking Code: A1T
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Drain Current |Id|: 2.8 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm
Package: SOT23
SI2301A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2301A Datasheet (PDF)
si2301a.pdf
M C CRMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street ChatsworthCA 91311SI2301APhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"P-Channel -20V,-2.8A, RDS(ON)=120m@VGS=-4.5VRDS(ON)=150m@VGS=-2.5V Enhancement Mode High dense cell design for extremely low RDS(ON)
si2301a.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Sl2301AP-Channel SI2301AMOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.080 @ VGS = -4.5 V -2.8-20200.110 @ VGS = -2.5 V -2.0SOT-23/-3LG 13 DS 2ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS -20VVGate-Source Voltage VGS "8Continuous Drain Curr
si2301a.pdf
RUMW UMW SI2301ASOT23 UMW SI2301AP-Channel 20-V(D-S) MOSFETID V(BR)DSS RDS(on)MAX 112m@-4.5V-20VA-2.81. GATE 142m@-2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET zz Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit A1Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Valu
si2301a.pdf
SOT-23 Plastic-Encapsulate MOSFETSSI2301ASI2301A P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.085@-4.5V-20V -3.0A30.110@-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA1 wAPPLICATIONLoad Switch for Portable DevicesDC/DC Converter
si2301a.pdf
SI2301A20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-3.0A 110mRDS(ON), Vgs@-2.5V, Ids@-2.0A 140m FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter Millimeter REF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.3
si2301ads.pdf
Si2301ADSNew ProductVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)b0.130 @ VGS = 4.5 V 2.0200.190 @ VGS = 2.5 V 1.6TO-236(SOT-23)G 13 DS 2Top ViewSi2301DS (1A)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 20V
si2301ai-ms.pdf
www.msksemi.comSI2301AI-MSSemiconductor CompianceGeneral Features V = -20V,I = -3ADS DR
si2301ads-t1.pdf
SI2301ADS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION
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