All MOSFET. SI2309 Datasheet

 

SI2309 MOSFET. Datasheet pdf. Equivalent

Type Designator: SI2309

Marking Code: A93TF

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 1.25 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.34 Ohm

Package: SOT23

SI2309 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI2309 Datasheet (PDF)

1.1. si2309ds.pdf Size:92K _vishay

SI2309
SI2309

Si2309DS Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω)ID (A) Pb-free 0.340 at VGS = - 10 V - 1.25 Available - 60 0.550 at VGS = - 4.5 V - 1 RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2309DS (A9)* * Marking Code Ordering Information: Si2309DS-T1 Si2309DS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless ot

1.2. si2309cds.pdf Size:202K _vishay

SI2309
SI2309

New Product Si2309CDS Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free Option Available VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) • TrenchFET® Power MOSFET 0.345 at VGS = - 10 V - 1.6 - 60 2.7 nC 0.450 at VGS = - 4.5 V - 1.4 APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 D S S 2 G Top View Si2309CDS (N9)* * Marking Code D O

 1.3. si2309cd.pdf Size:199K _vishay

SI2309
SI2309

New Product Si2309CDS Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) (?) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.345 at VGS = - 10 V - 1.6 - 60 2.7 nC 0.450 at VGS = - 4.5 V - 1.4 APPLICATIONS Load Switch TO-236 (SOT-23) G 1 3 D S S 2 G Top View Si2309CDS (N9)* * Marking Code D Ordering Inf

1.4. si2309ds.pdf Size:1712K _kexin

SI2309
SI2309

SMD Type MOSFET P-Channel Enhancement MOSFET SI2309DS (KI2309DS) SOT-23 Unit: mm +0.1 ■ Features 2.9-0.1 +0.1 0.4 -0.1 ● VDS (V) =-60V 3 ● ID =-1.25 A (VGS =-10V) ● RDS(ON) < 340mΩ (VGS =-10V) ● RDS(ON) < 550mΩ (VGS =-4.5V) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Pa

 1.5. si2309ds-3.pdf Size:1754K _kexin

SI2309
SI2309

SMD Type MOSFET P-Channel Enhancement MOSFET SI2309DS (KI2309DS) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) =-60V ● ID =-1.25 A (VGS =-10V) ● RDS(ON) < 340mΩ (VGS =-10V) 1 2 +0.02 +0.1 ● RDS(ON) < 550mΩ (VGS =-4.5V) 0.15 -0.02 0.95-0.1 +0.1 1.9-0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain ■ Absolute Maximum Ratings Ta =

1.6. si2309.pdf Size:302K _shenzhen-tuofeng-semi

SI2309
SI2309

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2309 P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω)ID (A) Pb-free 0.340 at VGS = - 10 V - 1.25 Available - 60 0.550 at VGS = - 4.5 V - 1 RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Volta

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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