All MOSFET. SSS8N60 Datasheet

 

SSS8N60 Datasheet and Replacement


   Type Designator: SSS8N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F
 

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SSS8N60 Datasheet (PDF)

 ..1. Size:1124K  shenzhen
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SSS8N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N SSS8N60 N-CHANNEL MOSFET MAIN CHARACTERISTICS Package 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

Datasheet: 70N03 , 90N03 , SSS10N60 , SSS12N60 , SSS1N60 , SSS2N60 , SSS5N60 , SSS7N60 , AON7403 , 1002 , 1115 , 1515 , G1601 , 2300 , 2301 , 2302 , 3035 .

History: SM1A23DSK

Keywords - SSS8N60 MOSFET datasheet

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