SSS8N60 Specs and Replacement
Type Designator: SSS8N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
SSS8N60 substitution
- MOSFET ⓘ Cross-Reference Search
SSS8N60 datasheet
Detailed specifications: 70N03 , 90N03 , SSS10N60 , SSS12N60 , SSS1N60 , SSS2N60 , SSS5N60 , SSS7N60 , IRF9640 , 1002 , 1115 , 1515 , G1601 , 2300 , 2301 , 2302 , 3035 .
History: SSS10N60
Keywords - SSS8N60 MOSFET specs
SSS8N60 cross reference
SSS8N60 equivalent finder
SSS8N60 pdf lookup
SSS8N60 substitution
SSS8N60 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SSS10N60
🌐 : EN ES РУ
LIST
Last Update
MOSFET: ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E | ASB65R120EFD | ASB60R150E | ASA80R900E | ASA80R750E | ASA80R290E | ASA70R950E
Popular searches
toshiba 2sc2290 | pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet | mp10b transistor | bc182b | 2n3054 transistor equivalent