2N7076 Datasheet and Replacement
Type Designator: 2N7076
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 850 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO254
2N7076 substitution
2N7076 Datasheet (PDF)
2n7076.pdf
isc N-Channel MOSFET Transistor 2N7076DESCRIPTIONDrain Current I =28A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D
Datasheet: 2N7063 , 2N7064 , 2N7066 , 2N7071 , 2N7072 , 2N7073 , 2N7074 , 2N7075 , AON7410 , 2N7077 , 2N7078 , 2N7079 , 2N7080 , 2N7081 , 2N7082 , 2N7085 , 2N7086 .
History: HGP059N12S
Keywords - 2N7076 MOSFET datasheet
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History: HGP059N12S
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