G2305
MOSFET. Datasheet pdf. Equivalent
Type Designator: G2305
Marking Code: G2305
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 4.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.8
nC
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 290
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
SOT23
G2305
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
G2305
Datasheet (PDF)
..1. Size:3022K lge
g2305.pdf 
G2305 P-Channel 20-V(D-S) MosfeDESCRIPTION DThe 2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -4.1ARDS(ON)
..2. Size:1714K goford
g2305.pdf
GOFORDG2305DESCRIPTION DThe 2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ) G2305-20V45 m 60m -4.8A
0.1. Size:364K diodes
dmg2305ux.pdf
DMG2305UX P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) max Package TA = +25C Low Input Capacitance 52m @VGS = -4.5V -5.0A Fast Switching Speed -20V SOT23 -3.6A 100m @VGS = -2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)
0.2. Size:425K diodes
dmg2305uxq.pdf
DMG2305UXQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance BVDSS RDS(ON) Max Package TA = +25C Low Input Capacitance 52m @VGS = -4.5V -5.0A Fast Switching Speed -20V SOT23 -3.6A 100m @VGS = -2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)
0.3. Size:926K secos
smg2305.pdf
SMG2305-4.2A, -20V,RDS(ON) 65mElektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of -C specifies halogen & lead-freeDescriptionSC-59ADim Min MaxThe SMG2305 provide the designer with the best Lcombination of fast switching, low on-resistance A 2.70 3.103and cost-effectiveness. B 1.40 1.60SBTop View2 1
0.4. Size:65K secos
smg2305p.pdf
SMG2305P -4.5A , -20V , RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to Lensure minimal power loss and heat dissipation. 33Top
0.5. Size:616K secos
smg2305pe.pdf
SMG2305PE -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ALensure minimal power loss and heat dissipation. Typical 33applicat
0.6. Size:680K willas
smg2305l.pdf
FM120-M WILLASSMG2305LTHRUP-Channel Enhancement Mode Power Mos.FETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better rDescriptioneverse leakage current and thermal resistance. SOD-123HSC-59 Low profile surface mounted applic
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