All MOSFET. 18N10 Datasheet

 

18N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: 18N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 9.3 nS

Drain-Source Capacitance (Cd): 240 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO252

18N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

18N10 Datasheet (PDF)

1.1. bsc118n10nsrev1.08 pdf.pdf Size:439K _infineon

18N10
18N10

BSC118N10NS G OptiMOS2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 11.8 m? DS(on),max Excellent gate charge x R product (FOM) DS(on) I 71 A D Very low on-resistance R DS(on) 150 C operating temperature PG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency

1.2. ips118n10n rev2.1.pdf Size:570K _infineon

18N10
18N10

$& " " $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 100 V DS R ( 492??6= ?@C>2= =6G6= 11.8 m DS(on) max R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 75 A D R /6CJ =@H @? C6D:DE2?46 DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@

 1.3. ixfh18n100q3 ixft18n100q3.pdf Size:130K _ixys

18N10
18N10

Advance Technical Information HiperFETTM VDSS = 1000V IXFT18N100Q3 Power MOSFETs ID25 = 18A IXFH18N100Q3 ≤ Ω Q3-Class RDS(on) ≤ Ω ≤ 660mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V TO-247 (IXFH) VDGR TJ = 25°C to 150°C, RGS = 1M

1.4. rfb18n10cs.pdf Size:152K _harris_semi

18N10
18N10



 1.5. 18n10.pdf Size:1693K _goford

18N10
18N10

GOFORD 18N10 Description The 18N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 18A 100V 56mΩ ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good st

Datasheet: G120N04 , G120N04A , G15P04 , G1815 , G1816 , G1825 , 15P03 , 16N10 , IRF5210 , 2002A , 20P10 , 21N06 , 22N10 , 2301H , 2301L , 25P06 , 25P10 .

 
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