All MOSFET. IRF520A Datasheet

 

IRF520A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF520A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 9.2 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 370 pF

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO220

IRF520A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF520A Datasheet (PDF)

0.1. irf520a.pdf Size:243K _fairchild_semi

IRF520A
IRF520A

IRF520AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.2 A Improved Gate Charge Extended Safe Operating AreaTO-220 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)1231.Gate 2. Drain 3. Source

0.2. irf520a.pdf Size:997K _samsung

IRF520A
IRF520A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

 8.1. irf520-fi irf521-fi irf522-fi irf523-fi.pdf Size:502K _st

IRF520A
IRF520A

8.2. irf520.pdf Size:297K _st

IRF520A
IRF520A

IRF520N-CHANNEL 100V - 0.115 - 10A TO-220LOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDIRF520 100 V

 8.3. irf520.pdf Size:180K _international_rectifier

IRF520A
IRF520A

8.4. irf520v.pdf Size:200K _international_rectifier

IRF520A
IRF520A

PD - 94092IRF520VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.165G Fast Switching Fully Avalanche RatedID = 9.6A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to

 8.5. irf520s irf520spbf.pdf Size:195K _international_rectifier

IRF520A
IRF520A

IRF520S, SiHF520SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.27 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 4.4 175 C Operating TemperatureQgd (nC) 7.7 Fast Switching Eas

8.6. irf520vs.pdf Size:129K _international_rectifier

IRF520A
IRF520A

PD - 94306IRF520VSIRF520VLHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.165 Fast SwitchingG Fully Avalanche RatedID = 9.6A Optimized for SMPS ApplicationsSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing t

8.7. irf520nl.pdf Size:170K _international_rectifier

IRF520A
IRF520A

PD -91340AIRF520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF520NS)VDSS = 100V Low-profile through-hole (IRF520NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG Fully Avalanche RatedID = 9.7ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low

8.8. irf520npbf.pdf Size:173K _international_rectifier

IRF520A
IRF520A

PD - 94818IRF520NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 Fully Avalanche RatedG Lead-FreeDescription ID = 9.7ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

8.9. irf520pbf.pdf Size:214K _international_rectifier

IRF520A
IRF520A

PD - 94850IRF520PbF Lead-Free11/25/03Document Number: 91017 www.vishay.com1IRF520PbFDocument Number: 91017 www.vishay.com2IRF520PbFDocument Number: 91017 www.vishay.com3IRF520PbFDocument Number: 91017 www.vishay.com4IRF520PbFDocument Number: 91017 www.vishay.com5IRF520PbFDocument Number: 91017 www.vishay.com6IRF520PbFTO-220AB Package Outline

8.10. irf520n.pdf Size:116K _international_rectifier

IRF520A
IRF520A

PD - 91339AIRF520NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 Fully Avalanche RatedGDescription ID = 9.7ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenef

8.11. irf520s.pdf Size:179K _international_rectifier

IRF520A
IRF520A

8.12. irf520nlpbf.pdf Size:408K _international_rectifier

IRF520A
IRF520A

PD- 95749IRF520NSPbFIRF520NLPbF Lead-Freewww.irf.com 18/23/04IRF520NS/LPbF2 www.irf.comIRF520NS/LPbFwww.irf.com 3IRF520NS/LPbF4 www.irf.comIRF520NS/LPbFwww.irf.com 5IRF520NS/LPbF6 www.irf.comIRF520NS/LPbFwww.irf.com 7IRF520NS/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 53

8.13. irf520ns.pdf Size:185K _international_rectifier

IRF520A
IRF520A

PD -91340AIRF520NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF520NS)VDSS = 100V Low-profile through-hole (IRF520NL) 175C Operating TemperatureRDS(on) = 0.20 Fast SwitchingG Fully Avalanche RatedID = 9.7ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low

8.14. irf520 sihf520.pdf Size:201K _vishay

IRF520A
IRF520A

IRF520, SiHF520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* 175 C Operating TemperatureQg (Max.) (nC) 16COMPLIANT Fast SwitchingQgs (nC) 4.4 Ease of ParallelingQgd (nC) 7.7 Simple Drive RequirementsConfiguration Single Complia

8.15. irf520nspbf irf520nlpbf.pdf Size:408K _infineon

IRF520A
IRF520A

PD- 95749IRF520NSPbFIRF520NLPbF Lead-Freewww.irf.com 18/23/04IRF520NS/LPbF2 www.irf.comIRF520NS/LPbFwww.irf.com 3IRF520NS/LPbF4 www.irf.comIRF520NS/LPbFwww.irf.com 5IRF520NS/LPbF6 www.irf.comIRF520NS/LPbFwww.irf.com 7IRF520NS/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 53

8.16. irf520 sihf520.pdf Size:151K _infineon

IRF520A
IRF520A

IRF520, SiHF520Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* 175 C Operating TemperatureQg (Max.) (nC) 16COMPLIANT Fast SwitchingQgs (nC) 4.4 Ease of ParallelingQgd (nC) 7.7 Simple Drive RequirementsConfiguration Single Complia

8.17. irf520npbf.pdf Size:173K _infineon

IRF520A
IRF520A

PD - 94818IRF520NPbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.20 Fully Avalanche RatedG Lead-FreeDescription ID = 9.7ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

8.18. irf520.pdf Size:229K _inchange_semiconductor

IRF520A
IRF520A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF520FEATURESTypical R =0.27DS(on)Avalanche Rugged TechnologyHigh Current CapabilityLow Gate Charge175 Operating TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Current ,High Speed SwitchingDC-DC&DC-AC ConvertersMotor Control ,A

8.19. irf520fi.pdf Size:227K _inchange_semiconductor

IRF520A
IRF520A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF520FIFEATURESTypical R =0.23DS(on)Avalanche Rugged TechnologyHigh Current CapabilityLow Gate Charge175 Operating TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Current ,High Speed SwitchingDC-DC&DC-AC ConvertersMotor Control

8.20. irf520nl.pdf Size:256K _inchange_semiconductor

IRF520A
IRF520A

Isc N-Channel MOSFET Transistor IRF520NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

8.21. irf520n.pdf Size:245K _inchange_semiconductor

IRF520A
IRF520A

isc N-Channel MOSFET Transistor IRF520NIIRF520NFEATURESStatic drain-source on-resistance:RDS(on) 0.2Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONEfficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =2

8.22. irf520ns.pdf Size:258K _inchange_semiconductor

IRF520A
IRF520A

Isc N-Channel MOSFET Transistor IRF520NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 , IRF520 , 2SK1058 , IRF520FI , IRF520N , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 .

 

 
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