All MOSFET. 2301L Datasheet

 

2301L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2301L

SMD Transistor Code: 2301L

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 75 pF

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: SOT23-3L

2301L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2301L Datasheet (PDF)

1.1. 2301l.pdf Size:1274K _goford

2301L
2301L

GOFORD 2301L DESCRIPTION D The 2301L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram ● VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -20V 64mΩ 89 mΩ -3 A ● High Power

Datasheet: 15P03 , 16N10 , 18N10 , 2002A , 20P10 , 21N06 , 22N10 , 2301H , BUZ10 , 25P06 , 25P10 , 25P10G , 28N10 , 28P55 , 30P10A , 30P55 , 3205PL .

 
Back to Top

 


2301L
  2301L
  2301L
  2301L
 

social 

LIST

Last Update

MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |

 

 

 
Back to Top