All MOSFET. 2301L Datasheet


2301L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2301L

SMD Transistor Code: 2301L

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 75 pF

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: SOT23-3L

2301L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2301L Datasheet (PDF)

1.1. lp2301lt1g.pdf Size:260K _update_mosfet


LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V R Vgs@-4.5V, Ids@-2.8A = 100 mΩ DS(ON), mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 Fully Characterized Avalanche Voltage and Current SOT– 23 (TO–236AB) Improved Shoot-Through FOM ▼Si

1.2. 2301l.pdf Size:1274K _goford


GOFORD 2301L DESCRIPTION D The 2301L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram ● VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -20V 64mΩ 89 mΩ -3 A ● High Power


Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

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