IRF520FI PDF and Equivalents Search

 ..1. Size:227K  inchange semiconductor
 irf520fi.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF520FI FEATURES Typical R =0.23 DS(on) Avalanche Rugged Technology High Current Capability Low Gate Charge 175 Operating Temperature Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Current ,High Speed Switching DC-DC&DC-AC Converters Motor Control ... See More ⇒

 8.1. Size:214K  international rectifier
 irf520pbf.pdf

PD - 94850 IRF520PbF Lead-Free 11/25/03 Document Number 91017 www.vishay.com 1 IRF520PbF Document Number 91017 www.vishay.com 2 IRF520PbF Document Number 91017 www.vishay.com 3 IRF520PbF Document Number 91017 www.vishay.com 4 IRF520PbF Document Number 91017 www.vishay.com 5 IRF520PbF Document Number 91017 www.vishay.com 6 IRF520PbF TO-220AB Package Outline ... See More ⇒

 8.2. Size:408K  international rectifier
 irf520nlpbf.pdf

PD- 95749 IRF520NSPbF IRF520NLPbF Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 53... See More ⇒

 8.3. Size:179K  international rectifier
 irf520s.pdf

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 8.4. Size:195K  international rectifier
 irf520s irf520spbf.pdf

IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 Surface Mount RDS(on) ( )VGS = 10 V 0.27 Available in Tape and Reel Qg (Max.) (nC) 16 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 4.4 175 C Operating Temperature Qgd (nC) 7.7 Fast Switching Eas... See More ⇒

 8.5. Size:180K  international rectifier
 irf520.pdf

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 8.6. Size:116K  international rectifier
 irf520n.pdf

PD - 91339A IRF520N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 Fully Avalanche Rated G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benef... See More ⇒

 8.7. Size:170K  international rectifier
 irf520nl.pdf

PD -91340A IRF520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low... See More ⇒

 8.8. Size:173K  international rectifier
 irf520npbf.pdf

PD - 94818 IRF520NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 Fully Avalanche Rated G Lead-Free Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are... See More ⇒

 8.9. Size:408K  international rectifier
 irf520nspbf irf520nlpbf.pdf

PD- 95749 IRF520NSPbF IRF520NLPbF Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 53... See More ⇒

 8.10. Size:129K  international rectifier
 irf520vs.pdf

PD - 94306 IRF520VS IRF520VL HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.165 Fast Switching G Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing t... See More ⇒

 8.11. Size:200K  international rectifier
 irf520v.pdf

PD - 94092 IRF520V HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.165 G Fast Switching Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to... See More ⇒

 8.12. Size:185K  international rectifier
 irf520ns.pdf

PD -91340A IRF520NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175 C Operating Temperature RDS(on) = 0.20 Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low... See More ⇒

 8.13. Size:297K  st
 irf520.pdf

IRF520 N-CHANNEL 100V - 0.115 - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS(on) ID IRF520 100 V ... See More ⇒

 8.14. Size:502K  st
 irf520-fi irf521-fi irf522-fi irf523-fi.pdf

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 8.15. Size:243K  fairchild semi
 irf520a.pdf

IRF520A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area TO-220 175 C Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source... See More ⇒

 8.16. Size:997K  samsung
 irf520a.pdf

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol ... See More ⇒

 8.17. Size:201K  vishay
 irf520 sihf520.pdf

IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT Fast Switching Qgs (nC) 4.4 Ease of Paralleling Qgd (nC) 7.7 Simple Drive Requirements Configuration Single Complia... See More ⇒

 8.18. Size:151K  infineon
 irf520 sihf520.pdf

IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT Fast Switching Qgs (nC) 4.4 Ease of Paralleling Qgd (nC) 7.7 Simple Drive Requirements Configuration Single Complia... See More ⇒

 8.19. Size:1501K  cn vbsemi
 irf520npbf.pdf

IRF520NPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE M... See More ⇒

 8.20. Size:3746K  cn vbsemi
 irf520ns.pdf

IRF520NS www.VBsemi.tw www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.100 at VGS = 10 V 100 20 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D D2PAK (TO-263) G G D S S N-Channel MOSFET ... See More ⇒

 8.21. Size:229K  inchange semiconductor
 irf520.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF520 FEATURES Typical R =0.27 DS(on) Avalanche Rugged Technology High Current Capability Low Gate Charge 175 Operating Temperature Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Current ,High Speed Switching DC-DC&DC-AC Converters Motor Control ,A... See More ⇒

 8.22. Size:245K  inchange semiconductor
 irf520n.pdf

isc N-Channel MOSFET Transistor IRF520N IIRF520N FEATURES Static drain-source on-resistance RDS(on) 0.2 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

 8.23. Size:256K  inchange semiconductor
 irf520nl.pdf

Isc N-Channel MOSFET Transistor IRF520NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100... See More ⇒

 8.24. Size:258K  inchange semiconductor
 irf520ns.pdf

Isc N-Channel MOSFET Transistor IRF520NS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒