40N10K PDF and Equivalents Search

 ..1. Size:1676K  goford
 40n10k.pdf

GOFORD 40N10K Description The 40N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) m 100V 14 40A Special process technology for high ESD capability High density cell design for ultra low Rdson ... See More ⇒

 0.1. Size:534K  cn hmsemi
 hm40n10k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON) ... See More ⇒

 0.2. Size:608K  cn hmsemi
 hm40n10ka.pdf

HM40N10KA N-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON) ... See More ⇒

 9.1. Size:1668K  1
 mcac40n10ya-tp.pdf

MCAC40N10YA Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 100 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=80V, VGS=0V Zero Gate Voltage Drain Current 1 A 2 4 V Gate-Threshold Voltage(Note 2 VGS(th) VDS... See More ⇒

 9.2. Size:160K  motorola
 mtp40n10erev1.pdf

... See More ⇒

 9.3. Size:198K  motorola
 mtb40n10e.pdf

... See More ⇒

 9.4. Size:165K  motorola
 mtp40n10e.pdf

... See More ⇒

 9.5. Size:192K  motorola
 mtb40n10erev1.pdf

... See More ⇒

 9.6. Size:768K  st
 sth240n10f7-2 sth240n10f7-6.pdf

STH240N10F7-2, STH240N10F7-6 N-channel 100 V, 0.002 typ., 180 A STripFET F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages Datasheet - production data Features Order codes VDS RDS(on)max. ID STH240N10F7-2 TAB TAB 100 V 0.0025 180 A STH240N10F7-6 Ultra low on-resistance 2 7 3 100% avalanche tested 1 1 H2PAK-2 H2PAK-6 Applications High current switchin... See More ⇒

 9.7. Size:336K  st
 stp40n10 stp40n10fi.pdf

... See More ⇒

 9.8. Size:326K  st
 stv40n10.pdf

... See More ⇒

 9.9. Size:1233K  st
 stl40n10f7.pdf

STL40N10F7 N-channel 100 V, 0.02 typ., 10 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STL40N10F7 100 V 0.024 10 A 5 W Ultra low on-resistance 1 2 3 100% avalanche tested 4 PowerFLAT 5x6 Applications Switching applications Description Figure 1. Internal sche... See More ⇒

 9.10. Size:616K  st
 stp240n10f7.pdf

STP240N10F7 N-channel 100 V, 2.85 m typ., 110 A STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max. ID TAB STP240N10F7 100 V 3.2 m 110 A Ultra low on-resistance 100% avalanche tested 3 2 1 Applications TO-220 High current switching applications Description This N-channel Power MOSFET utilizes the F... See More ⇒

 9.11. Size:153K  renesas
 np40n10pdf np40n10vdf np40n10ydf.pdf

Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF R07DS0361EJ0201 100 V 40 A N-channel Power MOS FET Rev.2.01 Application Automotive May 13, 2013 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Low on-state resistance RDS(on) = 25 m MAX. (VGS = 10 V, ID = 20 A) (NP40N10Y... See More ⇒

 9.12. Size:368K  fairchild semi
 rf1s40n10.pdf

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs 40A, 100V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040 the MegaFET process. This process, which uses feature UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti... See More ⇒

 9.13. Size:680K  fairchild semi
 fqh140n10.pdf

TM QFET FQH140N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 140A, 100V, RDS(on) = 0.01 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 470 pF) This advanced technology has been especially tailored to ... See More ⇒

 9.14. Size:687K  fairchild semi
 fqa140n10.pdf

September 2000 TM QFET QFET QFET QFET FQA140N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 140A, 100V, RDS(on) = 0.01 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 470 pF) This advanced technology has... See More ⇒

 9.15. Size:369K  fairchild semi
 rfg40n10 rfp40n10 rf1s40n10-sm.pdf

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs 40A, 100V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.040 the MegaFET process. This process, which uses feature UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti... See More ⇒

 9.16. Size:75K  vishay
 sup40n10-30 sup40n10.pdf

SUP40N10-30 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 0.034 at VGS = 6 V 37.5 COMPLIANT TO-220AB D G G D S Top View S Ordering Information SUP40N10-30 SUP40N10-30-E3 (Lead (Pb)-free) N-Channe... See More ⇒

 9.17. Size:141K  vishay
 sqr40n10-25.pdf

SQR40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY Package with Low Thermal Resistance VDS (V) 100 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.025 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.029 Material categorization ID (A) 40 For definitions of com... See More ⇒

 9.18. Size:140K  vishay
 sud40n10.pdf

SUD40N10-25 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Available 175 C Maximum Junction Temperature 0.025 at VGS = 10 V 40 RoHS* 100 100 % Rg Tested 0.028 at VGS = 4.5 V COMPLIANT 38 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD40N1... See More ⇒

 9.19. Size:172K  vishay
 sqd40n10-25.pdf

SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.025 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.029 AEC-Q101 Qualified ID (A) 40 Material categorization Configuration Single ... See More ⇒

 9.20. Size:140K  vishay
 sud40n10-25.pdf

SUD40N10-25 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Available 175 C Maximum Junction Temperature 0.025 at VGS = 10 V 40 RoHS* 100 100 % Rg Tested 0.028 at VGS = 4.5 V COMPLIANT 38 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD40N1... See More ⇒

 9.21. Size:164K  vishay
 sum40n10-30.pdf

SUM40N10-30 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.034 at VGS = 6 V 37.5 COMPLIANT D TO-263 G G D S Top View S Ordering Information SUM40N10-30 SUM40N10-... See More ⇒

 9.22. Size:709K  vishay
 sqm40n10-30.pdf

SQM40N10-30 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 100 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.030 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 6 V 0.034 AEC-Q101 Qualifiedd ID (A) 40 100 % Rg and UIS Tested... See More ⇒

 9.23. Size:478K  infineon
 bsz440n10ns3.pdf

BSZ440N10NS3 G Product Summary 3 Power-Transistor V 1 D Features R 44 m D n) m x Q .5BI C I 1 D Q ( @D9=9J54 6?B 43 43 3?>F5BC9?> Q ' 381>>5?B=1... See More ⇒

 9.24. Size:580K  infineon
 bsc440n10ns3 bsc440n10ns3g.pdf

BSC440N10NS3 G TM 3 Power-Transistor Product Summary Features VDS 100 V %07 *-5 '!2% # (!0'% &-0 ()'( &0%/3%,# 7 !..*)# !2)-,1 RDS(on),max 44 m .2)+ )8%$ &-0 $# $# # -,4%01)-, ID 18 A # (!,,%* ,-0+ !* *%4%* PG-TDSON-8 6# %**%,2 '!2% # (!0'% 6 R product (FOM) DS(on) %07 *-5 -, 0%1)12!,# % R DS(on) 9 -.%0!2),' 2%+ .%0!230% " &0%% *%!$ .*!2),' - # -+ .*)!,2 1) ... See More ⇒

 9.25. Size:1996K  infineon
 bsz440n10ns3g.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 3 Power-Transistor, 100 V BSZ440N10NS3 G Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 3 Power-Transistor, 100 V BSZ440N10NS3 G S3O8 1 Description 8 7 6 Features 5 Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal l... See More ⇒

 9.26. Size:1008K  infineon
 bsc040n10ns5sc.pdf

BSC040N10NS5SC MOSFET PG-WSON-8-2 OptiMOSTM 5 Power-Transistor, 100 V Features Double sided cooled package-with lowest Junction-top thermal resistance tab 175 C rated Optimized for high performance SMPS, e.g. sync. rec. 5 6 100% avalanche tested 7 8 Superior thermal resistance 4 3 N-channel 2 1 Pb-free lead plating; RoHS compliant Halogen-fr... See More ⇒

 9.27. Size:1192K  infineon
 bsc040n10ns5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM 5 Power-Transistor, 100 V BSC040N10NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM 5 Power-Transistor, 100 V BSC040N10NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior therma... See More ⇒

 9.28. Size:171K  ixys
 ixtq140n10p ixtt140n10p.pdf

IXTQ 140N10P VDSS = 100 V PolarHTTM IXTT 140N10P ID25 = 140 A Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 140 A ID(RMS) ... See More ⇒

 9.29. Size:177K  ixys
 ixfh140n10p ixft140n10p.pdf

IXFH 140N10P VDSS = 100 V PolarHVTM HiPerFET IXFT 140N10P ID25 = 140 A Power MOSFETs RDS(on) 11 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continu... See More ⇒

 9.30. Size:862K  mcc
 mcu40n10.pdf

MCU40N10 Features High Density Cell Desihn for Ultra Low RDS(on) Ultra Low Gate Charge Low Reverse Transfer Capacitance Excellent Package for Good Heat Dissipation N-CHANNEL Fully Characterized Avalanche Voltage and Current MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix... See More ⇒

 9.31. Size:1668K  mcc
 mcac40n10ya.pdf

MCAC40N10YA Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 100 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=80V, VGS=0V Zero Gate Voltage Drain Current 1 A 2 4 V Gate-Threshold Voltage(Note 2 VGS(th) VDS... See More ⇒

 9.32. Size:520K  onsemi
 fdbl0240n100.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.33. Size:2504K  onsemi
 fqa140n10.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.34. Size:410K  intersil
 rfg40n10le rfp40n10le rf1s40n10lesm.pdf

RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level Features N-Channel Power MOSFETs 40A, 100V These N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.040 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes appr... See More ⇒

 9.35. Size:2414K  secos
 ssd40n10-30d.pdf

SSD40N10-30D 26A, 100V, RDS(ON) 36m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free FEATURES TO-252(D-Pack) Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. APPLICATION PoE Power Sourcing Equipment. A C B PoE Powered Devices. D Telecom DC/DC converte... See More ⇒

 9.36. Size:405K  cet
 ceu40n10 ced40n10.pdf

CED40N10/CEU40N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 37A, RDS(ON) = 32m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth... See More ⇒

 9.37. Size:383K  cet
 cep140n10 ceb140n10.pdf

CEP140N10/CEB140N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 137A, RDS(ON) = 7.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise... See More ⇒

 9.38. Size:173K  ssdi
 sff40n10-28.pdf

... See More ⇒

 9.39. Size:61K  analog power
 am40n10-28d.pdf

Analog Power AM40N10-28D N-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 28 @ VGS = 10V 35 converters and power management in portable and 100 30 @ VGS = 4.5V 33 bat... See More ⇒

 9.40. Size:291K  analog power
 am40n10-30d.pdf

Analog Power AM40N10-30D N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 36 @ VGS = 10V 26 Low thermal impedance 100 42 @ VGS = 4.5V 24 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost co... See More ⇒

 9.41. Size:303K  analog power
 am40n10-30i.pdf

Analog Power AM40N10-30I N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 36 @ VGS = 10V 31 Low thermal impedance 100 42 @ VGS = 4.5V 29 Fast switching speed Typical Applications TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO... See More ⇒

 9.42. Size:2116K  goford
 140n10.pdf

GOFORD 140N10 Description Features VDSS RDS(ON) ID @ 10V (typ) 100V m 6.2 140A Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current Application Power Supply UPS Power Tool TO-220 Absolute Maximum Ratings (TA=25 C unless otherwise noted) Symbol Parameter Maximum Unit VDSS Drain-to-Source V... See More ⇒

 9.43. Size:567K  crhj
 crst040n10n crss037n10n.pdf

CRST040N10N, CRSS037N10N ( ) SkyMOS1 N-MOSFET 100V, 3.3m , 120A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on) 3.3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested ... See More ⇒

 9.44. Size:109K  china
 cs140n10a.pdf

CS140N10A N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 75 A IDM 140 A VGS 17 V Tjm +150 Tstg -55 +150 RthJC 0.4 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=39A 0.02 VGS th VDS=VGS,I... See More ⇒

 9.45. Size:342K  first silicon
 ftk40n10d.pdf

SEMICONDUCTOR FTK40N10D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION DIM MILLIMETERS This advanced high voltage MOSFET is designed to stand high A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 energy in the avalanche mode and switch efficiently. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 This new high energy device also offers a drain H H 1 00 MAX I 2 30 ... See More ⇒

 9.46. Size:977K  cn wxdh
 dh140n10b dh140n10d.pdf

DH140N10B&DH140N10D 68A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 11.0m DS(on) (TYP) standard. 1 3 S I = 68A D 2 Features Low on resistance Low gate charge Fast s... See More ⇒

 9.47. Size:330K  ruichips
 ru140n10r.pdf

RU140N10R N-Channel Advanced Power MOSFET Features Pin Description 100V/140A RDS (ON)=6.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Low Gate Charge Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Applications Switching applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA... See More ⇒

 9.48. Size:363K  ncepower
 ncep040n10.pdf

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=... See More ⇒

 9.49. Size:363K  ncepower
 ncep040n10d.pdf

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=... See More ⇒

 9.50. Size:363K  ncepower
 ncep040n10m.pdf

NCEP040N10M,NCEP040N10MD NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VG... See More ⇒

 9.51. Size:985K  ncepower
 ncep040n10gu.pdf

http //www.ncepower.com NCEP040N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N10GU uses Super Trench II technology that is V =100V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =3.6m (Typ.) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc... See More ⇒

 9.52. Size:363K  ncepower
 ncep040n10 ncep040n10d.pdf

NCEP040N10,NCEP040N10D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =130A uniquely optimized to provide the most efficient high frequency RDS(ON)=3.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.55m , typical (TO-263)@ VGS=... See More ⇒

 9.53. Size:400K  samwin
 sw30n06 swp40n10 swi40n10 swd30n06.pdf

SAMWIN SW30N06 N-channel MOSFET TO-220 TO-251 TO-252 Features BVDSS 60V ID 30A High ruggedness RDS(ON) (Max 0.036 )@VGS=10V RDS(ON) 0.036 ohm Gate Charge (Typ 20nC) 1 2 1 Improved dv/dt Capability 2 1 3 2 3 100% Avalanche Tested 3 2 1. Gate 2. Drain 3. Source 1 General Description These N-channel enhancement mode power field effect transistors ... See More ⇒

 9.54. Size:207K  temic
 smp40n10.pdf

... See More ⇒

 9.55. Size:656K  way-on
 wmo240n10lg2.pdf

WMO240N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description WMO240N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = ... See More ⇒

 9.56. Size:813K  way-on
 wms240n10lg2.pdf

... See More ⇒

 9.57. Size:982K  allpower
 ap40n100lk.pdf

... See More ⇒

 9.58. Size:1689K  allpower
 ap40n100k.pdf

... See More ⇒

 9.59. Size:2137K  first semi
 fir40n10lg.pdf

FIR40N10LG 100V N-Channel MOSFET TO-252 Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 61.7nC (Typ.). BVDSS=100V,ID=40A RDS(on) 0.032 (Max) @VG=10V 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Sourse (S) Absolute Maximum Ratings* (Tc=25 Unless otherwise no... See More ⇒

 9.60. Size:1054K  winsok
 wsf40n10a.pdf

WSF40N10A N-Ch MOSFET General Description Product Summery The WSF40N10A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 42m 31A gate charge for most of the synchronous buck converter applications . Applications The WSF40N10A meet the RoHS and Green High Frequency Point-of-Load Synchron... See More ⇒

 9.61. Size:1509K  winsok
 wsd40n10gdn56.pdf

WSD40N10GDN56 N-Ch MOSFET General Description Product Summery The WSD40N10GDN56 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 16m 40A and gate charge for most of the synchronous buck converter applications . Applications The WSD40N10GDN56 meet the RoHS and Green Power Management in TV Co... See More ⇒

 9.62. Size:872K  winsok
 wsf40n10.pdf

WSF40N10 N-Ch MOSFET General Description Product Summery The WSF40N10 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 100V 32m 40A for most of the synchronous buck converter applications . Applications The WSF40N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous... See More ⇒

 9.63. Size:841K  cn vbsemi
 rfp40n10.pdf

RFP40N10 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un... See More ⇒

 9.64. Size:867K  cn vbsemi
 sud40n10-25.pdf

SUD40N10-25 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un... See More ⇒

 9.65. Size:2331K  cn vbsemi
 vbze40n10.pdf

VBZE40N10 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 100 0.035at VGS = 10 V 30 RoHS* Low Thermal Resistance Package COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Paramet... See More ⇒

 9.66. Size:1179K  cn vbsemi
 vbzm40n10.pdf

VBZM40N10 www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) 100 Maximum 175 C junction temperature RDS(on) ( ) at VGS = 10 V 0.005 a 100 % Rg and UIS tested ID ( 120 (A) Material categorization Configuration Single for definitions of compliance please see D TO-220AB G S S S D G N-Channel MOSFET... See More ⇒

 9.67. Size:644K  cn vbsemi
 vbzfb40n10.pdf

VBZFB40N10 www.VBsemi.com N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.056 at VGS = 10 V 200 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D Drain Connected to G Drain-Tab G D S S Top View N-... See More ⇒

 9.68. Size:451K  cn wuxi unigroup
 tmb140n10a.pdf

TMB140N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter... See More ⇒

 9.69. Size:1130K  cn hmsemi
 hms40n10d.pdf

HMS40N10D N-Channel Super Trench Power MOSFET Description The HMS40N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectifi... See More ⇒

 9.70. Size:798K  cn hmsemi
 hm40n10.pdf

HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON) ... See More ⇒

 9.71. Size:2226K  cn scilicon
 sfp043n100c3 sfb040n100c3.pdf

SFP043N100C3,SFB040N100C3 N-MOSFET 100V, 3.4m , 120A Features Product Summary Extremely low on-resistance RDS(on) VDS 100V Excellent QgxRDS(on) product(FOM) RDS(on) 3.4m Qualified according to JEDEC criteria ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies) SFP... See More ⇒

 9.72. Size:586K  cn scilicon
 sfp040n100c3 sfb037n100c3.pdf

SFP040N100C3,SFB037N100C3 N-MOSFET 100V, 3.2m , 120A Features Product Summary Enhancement Mode VDS 100V Very Low On-Resistance RDS(on) 3.2m Fast Switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Light Electric Vehicles Motor Control and Drive DC/DC Converter,and Genneral Purpose Applications SFP040N100C3 SFB037N100C3 Package Mark... See More ⇒

 9.73. Size:922K  cn minos
 mpg40n10p.pdf

100V N-Channel Power MOSFET DESCRIPTION The MPG40N10P uses advanced trench technology toprovide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 100V,I =40A DS D R ... See More ⇒

 9.74. Size:928K  cn minos
 mdt40n10d.pdf

100V N-Channel Power MOSFET DESCRIPTION The MDT40N10D uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 40A R ... See More ⇒

 9.75. Size:219K  inchange semiconductor
 40n10.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 40N10 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies,converters,AC and DC mo... See More ⇒

 9.76. Size:259K  inchange semiconductor
 fqa140n10.pdf

isc N-Channel MOSFET Transistor FQA140N10 FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in audio amplifier, high efficiency switching D... See More ⇒

 9.77. Size:1220K  cn apm
 apg40n10df.pdf

APG40N10DF 100V N-Channel Enhancement Mode MOSFET Description The APG40N10DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R ... See More ⇒

 9.78. Size:2103K  cn apm
 apg40n10d.pdf

APG40N10D 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R ... See More ⇒

 9.79. Size:1516K  cn apm
 apg40n10nf.pdf

APG40N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG40N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni... See More ⇒

 9.80. Size:1356K  cn apm
 ap40n10p.pdf

AP40N10P 100V N-Channel Enhancement Mode MOSFET Description The AP40N10P uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R ... See More ⇒

 9.81. Size:2634K  cn apm
 apg40n10s.pdf

APG40N10S 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS D R ... See More ⇒