5N20A Datasheet and Replacement
Type Designator: 5N20A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10.7 nS
Cossⓘ - Output Capacitance: 30.2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO251 TO252
5N20A substitution
5N20A Datasheet (PDF)
5n20a.pdf

GOFORD5N20ADescription Features VDSS RDS(ON) ID @10V (Typ)200V 0.49 5A Fast switching TO-252 TO-251 100% avalanche tested Improved dv/dt capability Application DC Motor Control and Class D Amplifier Uninterruptible Power Supply (UPS) Automotive Absolute Maximum Ratings TC=25 unless otherwise specified Max. Symbol Parameter U
ssh45n20a.pdf

SSH45N20AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input CapacitanceID = 45 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol
ssp45n20a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input CapacitanceID = 35 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
Datasheet: 80N03 , 80N04 , 80N08TR , 8205A , 8205B , G3205 , G1010 , G3710 , BS170 , 630A , 640 , 18N20 , 18N20A , 2N25 , 3N25 , 740 , 840 .
History: BUZ73AL | TK12A55D | MP4N150 | PMPB12UNEA | SSM3K329R | SL21N65CF
Keywords - 5N20A MOSFET datasheet
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History: BUZ73AL | TK12A55D | MP4N150 | PMPB12UNEA | SSM3K329R | SL21N65CF



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