All MOSFET. 12N60F Datasheet

 

12N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: 12N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 54 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 90 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.65 Ohm

Package: TO220F

12N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

12N60F Datasheet (PDF)

1.1. msu12n60f msu12n60t.pdf Size:714K _upd-mosfet

12N60F
12N60F

600V/12A POWER MOSFET (N-Channel) MSU12N60 600V/12A Power MOSFET (N-Channel) General Description  MSU12N60 is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate TO-220 TO-220F charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and

1.2. cs12n60f.pdf Size:252K _update_mosfet

12N60F
12N60F

BRF12N60 N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 该器件适用于高效电源模块,主动式 PFC 电路和基于半桥拓扑结构的电子节能灯。 Purpose: These devices are well suited for high efficient switched mode power supplies,active power factor correction,electronic lamp ballast based on half bridge topology. 特点: 低栅电荷,反向传输电容低,开关

 1.3. cs12n60fa9h.pdf Size:251K _update_mosfet

12N60F
12N60F

Silicon N-Channel Power MOSFET R ○ CS12N60F A9H VDSS 600 V General Description: ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.4. cs12n60fa9hd.pdf Size:354K _update_mosfet

12N60F
12N60F

Silicon N-Channel Power MOSFET R ○ CS12N60F A9HD VDSS 600 V General Description: ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 1.5. aotf12n60fd.pdf Size:590K _aosemi

12N60F
12N60F

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.6. aob12n60fd.pdf Size:590K _aosemi

12N60F
12N60F

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.7. aot12n60fd.pdf Size:590K _aosemi

12N60F
12N60F

AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.65Ω performance and robustness in popular AC-DC applications. By providing

1.8. mtn12n60fp.pdf Size:453K _cystek

12N60F
12N60F

Spec. No. : C743FP Issued Date : 2011.05.09 CYStech Electronics Corp. Revised Date : 2014.05.15 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS :600V RDS(ON) : 0.6Ω typ. MTN12N60FP ID : 12A Description The MTN12N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

1.9. 12n60 12n60f.pdf Size:2259K _goford

12N60F
12N60F

GOFORD 12N60/12N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS 600V 0.65Ω 12A technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are

1.10. ssf12n60f.pdf Size:536K _silikron

12N60F
12N60F

 SSF12N60F Main Product Characteristics: VDSS 600V RDS(on) 0.55Ω (typ.) ID 12A Sche ma ti c di agr a m TO220F Marking and pin Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery 

1.11. cs12n60f a9hd.pdf Size:354K _crhj

12N60F
12N60F

Silicon N-Channel Power MOSFET R ○ CS12N60F A9HD VDSS 600 V General Description: ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

1.12. cs12n60f a9h.pdf Size:252K _crhj

12N60F
12N60F

Silicon N-Channel Power MOSFET R ○ CS12N60F A9H VDSS 600 V General Description: ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25℃) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.13. cs12n60f a9r.pdf Size:270K _crhj

12N60F
12N60F

Silicon N-Channel Power MOSFET R ○ CS12N60F A9R General Description: VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25℃) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
Back to Top

 


12N60F
  12N60F
  12N60F
  12N60F
 

social 

LIST

Last Update

MOSFET: RJL6013DPP | RJL6012DPP | RJL5014DPP | RJL5013DPP | RJL5012DPP | RJK6036DP3-A0 | RJK6032DPH-E0 | RJK6025DPH-E0 | RJK6024DP3-A0 | RJK6013DPP-E0 | RJK6002DPH-E0 | RJK6002DJE | RJK5032DPH-E0 | RJK5032DPD | RJK5014DPP-E0 |

 

 

 
Back to Top