All MOSFET. FTK1016 Datasheet

 

FTK1016 MOSFET. Datasheet pdf. Equivalent

Type Designator: FTK1016

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 227 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15.6 nS

Drain-Source Capacitance (Cd): 350 pF

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO220

FTK1016 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTK1016 Datasheet (PDF)

1.1. ftk1016.pdf Size:341K _first_silicon

FTK1016
FTK1016

SEMICONDUCTOR FTK1016 TECHNICAL DATA Feathers: ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16mΩ(Max.) Fully characterized avalanche voltage and current Description: The FTK1016 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability

4.1. ftk1013.pdf Size:488K _first_silicon

FTK1016
FTK1016

SEMICONDUCTOR FTK1013 TECHNICAL DATA P-Channel 1.8-V (G-S) MOSFET FEATURES TrenchFET Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 1.2Ω SOT-523 Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

 5.1. ftk10n65p f dd.pdf Size:283K _first_silicon

FTK1016
FTK1016

SEMICONDUCTOR FTK10N65P / F / DD TECHNICAL DATA 10 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul

5.2. ftk1090.pdf Size:484K _first_silicon

FTK1016
FTK1016

SEMICONDUCTOR FTK1090 TECHNICAL DATA Feathers: ID =15A ■ Advanced trench process technology BV=100V ■ Special designed for Convertors and power controls Rdson=0.06Ω (Typ.) ■ High density cell design for ultra low Rdson ■ Fully characterized Avalanche voltage and current ■ Avalanche Energy 100% test Description: The FTK1090 is a new generation of high voltage an

 5.3. ftk100n10p.pdf Size:293K _first_silicon

FTK1016
FTK1016

SEMICONDUCTOR FTK100N10P TECHNICAL DATA N-Channel Power MOSFET (100V/100A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25℃) Symbol Rating Unit 1.Gate 2.Drai

5.4. ftk10n10.pdf Size:468K _first_silicon

FTK1016
FTK1016

SEMICONDUCTOR FTK10N10 TECHNICAL DATA FTK10N10 N-Channel Power MOSFET A I GENERAL DESCRIPTION C J The FTK10N10 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERS A 6 50 ± 0 2 B 5 60 ± 0 2 C 5 20 ± 0 2 D 1 50 ± 0 2 E 2 70 ± 0 2 FEATURE F 2 30 ± 0 1

 5.5. ftk10n60p f dd.pdf Size:339K _first_silicon

FTK1016
FTK1016

SEMICONDUCTOR FTK10N60P/F/DD TECHNICAL DATA 10 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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