FTK1016 MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK1016
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 227 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Rise Time (tr): 15.6 nS
Drain-Source Capacitance (Cd): 350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm
Package: TO220
FTK1016 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK1016 Datasheet (PDF)
ftk1016.pdf
SEMICONDUCTORFTK1016TECHNICAL DATAFeathers: ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m(Max. Fully characterized avalanche voltage and current Description: The FTK1016 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability
ftk1013.pdf
SEMICONDUCTOR FTK1013TECHNICAL DATAP-Channel 1.8-V (G-S) MOSFETFEATURESTrenchFET Power MOSFET: 1.8-V RatedGate-Source ESD Protected: 2000 VHigh-Side SwitchingLow On-Resistance: 1.2 SOT-523Low Threshold: 0.8 V (typ)Fast Switching Speed: 14 nsS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
ftk10n65p f dd.pdf
SEMICONDUCTORFTK10N65P / F / DDTECHNICAL DATA10 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pul
ftk1090.pdf
SEMICONDUCTORFTK1090TECHNICAL DATAFeathers: ID =15A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=0.06 (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK1090 is a new generation of high voltage an
ftk10n10.pdf
SEMICONDUCTORFTK10N10TECHNICAL DATAFTK10N10 N-Channel Power MOSFET AIGENERAL DESCRIPTION CJThe FTK10N10 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2D 1 50 0 2E 2 70 0 2FEATURE F 2 30 0 1
ftk100n10p.pdf
SEMICONDUCTORFTK100N10PTECHNICAL DATAN-Channel Power MOSFET (100V/100A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Symbol Rating Unit 1.Gate 2.Drai
ftk10n60p f dd.pdf
SEMICONDUCTORFTK10N60P/F/DDTECHNICAL DATA10 Amps, 600 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulse
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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