FTK8810 PDF and Equivalents Search

 

FTK8810 Specs and Replacement

Type Designator: FTK8810

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TSSOP8

FTK8810 substitution

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FTK8810 datasheet

 ..1. Size:309K  first silicon
 ftk8810.pdf pdf_icon

FTK8810

SEMICONDUCTOR FTK8810 TECHNICAL DATA DESCRIPTION The FTK8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON) ... See More ⇒

 0.1. Size:363K  first silicon
 ftk8810l.pdf pdf_icon

FTK8810

SEMICONDUCTOR FTK8810L TECHNICAL DATA Dual N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The FTK8810L use advanced trench technology to provide excellent SOT-23-6L RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. ABSOLUTE MAXIMUM RAT... See More ⇒

 9.1. Size:266K  first silicon
 ftk8822.pdf pdf_icon

FTK8810

SEMICONDUCTOR FTK8822 TECHNICAL DATA D 1 D 2 DESCRIPTION The FTK8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2 with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S 1 S 2 facilitated by its common-drain configuration. Schematic diagram GENERAL FEATURES... See More ⇒

Detailed specifications: FTK100N10P, FTK1013, FTK1016, FTK1090, FTK10N10, FTK10N60DD, FTK10N60F, FTK10N60P, 2SK3568, FTK8810L, FTK8822, FTK8N65DD, FTK8N65F, FTK8N65P, FTK8N80DD, FTK8N80F, FTK8N80P

Keywords - FTK8810 MOSFET specs

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