FTK8810 Datasheet and Replacement. Cross Reference Search

FTK8810 Datasheet (PDF)

..1. Size:309K first silicon
ftk8810.pdf pdf_icon

SEMICONDUCTORFTK8810TECHNICAL DATADESCRIPTION The FTK8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

0.1. Size:363K first silicon
ftk8810l.pdf pdf_icon

SEMICONDUCTORFTK8810LTECHNICAL DATADual N-Channel Enhancement Mode Field Effect Transistor DESCRIPTIONThe FTK8810L use advanced trench technology to provide excellent SOT-23-6L RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. ABSOLUTE MAXIMUM RAT

9.1. Size:266K first silicon
ftk8822.pdf pdf_icon

SEMICONDUCTOR FTK8822 TECHNICAL DATAD 1D 2DESCRIPTIONThe FTK8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S 1 S 2facilitated by its common-drain configuration. Schematic diagramGENERAL FEATURES

Datasheet: FTK100N10P , FTK1013 , FTK1016 , FTK1090 , FTK10N10 , FTK10N60DD , FTK10N60F , FTK10N60P , 5N65 , FTK8810L , FTK8822 , FTK8N65DD , FTK8N65F , FTK8N65P , FTK8N80DD , FTK8N80F , FTK8N80P .