FTK8822 Specs and Replacement
Type Designator: FTK8822
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TSSOP8
FTK8822 substitution
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FTK8822 datasheet
ftk8822.pdf
SEMICONDUCTOR FTK8822 TECHNICAL DATA D 1 D 2 DESCRIPTION The FTK8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2 with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S 1 S 2 facilitated by its common-drain configuration. Schematic diagram GENERAL FEATURES... See More ⇒
ftk8810l.pdf
SEMICONDUCTOR FTK8810L TECHNICAL DATA Dual N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The FTK8810L use advanced trench technology to provide excellent SOT-23-6L RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. ABSOLUTE MAXIMUM RAT... See More ⇒
ftk8810.pdf
SEMICONDUCTOR FTK8810 TECHNICAL DATA DESCRIPTION The FTK8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON) ... See More ⇒
Detailed specifications: FTK1016, FTK1090, FTK10N10, FTK10N60DD, FTK10N60F, FTK10N60P, FTK8810, FTK8810L, 5N60, FTK8N65DD, FTK8N65F, FTK8N65P, FTK8N80DD, FTK8N80F, FTK8N80P, FTK9435, FTK9926
Keywords - FTK8822 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FTK10N60F
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