All MOSFET. FTK7N60P Datasheet

 

FTK7N60P Datasheet and Replacement


   Type Designator: FTK7N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220
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FTK7N60P Datasheet (PDF)

 ..1. Size:247K  first silicon
 ftk7n60p f dd.pdf pdf_icon

FTK7N60P

SEMICONDUCTORFTK7N60P / F / DDTECHNICAL DATAPower MOSFET7.0 Amps, 600 VoltsN-CHANNEL MOSFET P :1DESCRIPTIONTO-220The FTK 7N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedF :s

 8.1. Size:578K  first silicon
 ftk7n65p f dd.pdf pdf_icon

FTK7N60P

SEMICONDUCTORFTK7N65P/F/DDTECHNICAL DATA7.0 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulse

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FMR11N90E

Keywords - FTK7N60P MOSFET datasheet

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