FTK7N65P Specs and Replacement
Type Designator: FTK7N65P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220
FTK7N65P substitution
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FTK7N65P datasheet
ftk7n65p f dd.pdf
SEMICONDUCTOR FTK7N65P/F/DD TECHNICAL DATA 7.0 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse ... See More ⇒
ftk7n60p f dd.pdf
SEMICONDUCTOR FTK7N60P / F / DD TECHNICAL DATA Power MOSFET 7.0 Amps, 600 Volts N-CHANNEL MOSFET P 1 DESCRIPTION TO-220 The FTK 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed F s... See More ⇒
Detailed specifications: FTK830D, FTK84, FTK840P, FTK840F, FTK84D, FTK7N60DD, FTK7N60F, FTK7N60P, IRFB7545, FTK7N65F, FTK7N65DD, FTK75N75, FTK10N65DD, FTK10N65F, FTK10N65P, FTK123, FTK630P
Keywords - FTK7N65P MOSFET specs
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