FTK10N65F Specs and Replacement
Type Designator: FTK10N65F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220F
FTK10N65F substitution
- MOSFET ⓘ Cross-Reference Search
FTK10N65F datasheet
ftk10n65p f dd.pdf
SEMICONDUCTOR FTK10N65P / F / DD TECHNICAL DATA 10 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul... See More ⇒
ftk10n60p f dd.pdf
SEMICONDUCTOR FTK10N60P/F/DD TECHNICAL DATA 10 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse ... See More ⇒
ftk10n10.pdf
SEMICONDUCTOR FTK10N10 TECHNICAL DATA FTK10N10 N-Channel Power MOSFET A I GENERAL DESCRIPTION C J The FTK10N10 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 FEATURE F 2 30 0 1... See More ⇒
Detailed specifications: FTK7N60DD, FTK7N60F, FTK7N60P, FTK7N65P, FTK7N65F, FTK7N65DD, FTK75N75, FTK10N65DD, MMIS60R580P, FTK10N65P, FTK123, FTK630P, FTK630F, FTK7000, FTK7002, FTK7002D, FTK7002E
Keywords - FTK10N65F MOSFET specs
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