FTK10N65F MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK10N65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 9.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220F
FTK10N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK10N65F Datasheet (PDF)
ftk10n65p f dd.pdf
SEMICONDUCTORFTK10N65P / F / DDTECHNICAL DATA10 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pul
ftk10n60p f dd.pdf
SEMICONDUCTORFTK10N60P/F/DDTECHNICAL DATA10 Amps, 600 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulse
ftk10n10.pdf
SEMICONDUCTORFTK10N10TECHNICAL DATAFTK10N10 N-Channel Power MOSFET AIGENERAL DESCRIPTION CJThe FTK10N10 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2D 1 50 0 2E 2 70 0 2FEATURE F 2 30 0 1
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFP34N65X2 | TPCP8303
History: IXFP34N65X2 | TPCP8303
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