FTK7002EN Specs and Replacement
Type Designator: FTK7002EN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.154 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: SC89
FTK7002EN substitution
- MOSFET ⓘ Cross-Reference Search
FTK7002EN datasheet
ftk7002e.pdf
SEMICONDUCTOR FTK7002E TECHNICAL DATA Small Signal MOSFET 115 mAmps, 60 Volts N Channel SOT 23 3 Features 2 1) Low on-resistance. (MAX 7.5 ) 1 2) Fast switching speed. 3) Low-voltage drive. SOT 23 (TO 236AB) 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 7) Esd Protected 2000V Device Marking and Ordering Information ... See More ⇒
ftk7002d.pdf
SEMICONDUCTOR FTK7002D TECHNICAL DATA Dual Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SC-88 We declare that the material of product are Halogen Free and compliance with RoHS requirements. ESD Protected 1000V MAXIMUM RATINGS Rating Symbol Value Unit 3 2 1 Drain-Source Voltage VDSS 60 Vdc D2 G1 S1 Drain-Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current ID ... See More ⇒
ftk7002u.pdf
SEMICONDUCTOR FTK7002U TECHNICAL DATA Small Signal MOSFET 115 mAmps, 60 Volts 3 N Channel SOT 323 2 We declare that the material of product are Halogen Free and 1 compliance with RoHS requirements. SOT-323 ESD Protected 1000V MAXIMUM RATINGS(Ta = 25 ) Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS VDGR 60 Vdc Simplifie... See More ⇒
Detailed specifications: FTK10N65P, FTK123, FTK630P, FTK630F, FTK7000, FTK7002, FTK7002D, FTK7002E, IRF740, FTK7002K, FTK7002U, FTK70N06, FTK730F, FTK730P, FTK7328, FTK7509, FTK7510
Keywords - FTK7002EN MOSFET specs
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