All MOSFET. FTK7509 Datasheet

 

FTK7509 Datasheet and Replacement


   Type Designator: FTK7509
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 165 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.8 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

 FTK7509 substitution

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FTK7509 Datasheet (PDF)

 ..1. Size:566K  first silicon
ftk7509.pdf pdf_icon

FTK7509

SEMICONDUCTOR FTK7509TECHNICAL DATA Feathers:ID=80A Advanced trench process technologyBV=80V Special designed for Convertors and power controlsRdson=6.3m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description:The FTK7509 is a new generation of middle voltage and hig

 9.1. Size:388K  first silicon
ftk7510 1.pdf pdf_icon

FTK7509

SEMICONDUCTOR FTK7510F/PTECHNICAL DATAID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls P : High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 12 Avalanche Energy 100% test 3TO-220Description: The FTK7510 is a new generation of middle voltag

 9.2. Size:366K  first silicon
ftk75n75.pdf pdf_icon

FTK7509

SEMICONDUCTORFTK75N75TECHNICAL DATAID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls High density cell design for ultra low Rdson TO-220 Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK75N75 is a new generation of middle voltage and 123

 9.3. Size:327K  first silicon
ftk7510.pdf pdf_icon

FTK7509

SEMICONDUCTOR FTK7510 TECHNICAL DATAFeathers: ID=75A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=10mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK7510 is a new generation of middle voltage and high current N

Datasheet: FTK7002E , FTK7002EN , FTK7002K , FTK7002U , FTK70N06 , FTK730F , FTK730P , FTK7328 , IRFZ44 , FTK7510 , FTK7510F , FTK7510P , FTK6014 , FTK6014A , FTK60N04D , FTK60P05S , FTK6401 .

History: NVMTS0D6N04C

Keywords - FTK7509 MOSFET datasheet

 FTK7509 cross reference
 FTK7509 equivalent finder
 FTK7509 lookup
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