FTK7509 MOSFET Datasheet: N-Ch, 80V, 80A. Full specification with pinout and replacement list

FTK7509 Specs and Replacement

Type Designator: FTK7509

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 165 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.8 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

FTK7509 substitution

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FTK7509 datasheet

..1. Size:566K first silicon
ftk7509.pdf pdf_icon

SEMICONDUCTOR FTK7509 TECHNICAL DATA Feathers ID=80A Advanced trench process technology BV=80V Special designed for Convertors and power controls Rdson=6.3m (Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The FTK7509 is a new generation of middle voltage and hig... See More ⇒

9.1. Size:388K first silicon
ftk7510 1.pdf pdf_icon

SEMICONDUCTOR FTK7510F/P TECHNICAL DATA ID=75A Feathers BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls P High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 1 2 Avalanche Energy 100% test 3 TO-220 Description The FTK7510 is a new generation of middle voltag... See More ⇒

9.2. Size:366K first silicon
ftk75n75.pdf pdf_icon

SEMICONDUCTOR FTK75N75 TECHNICAL DATA ID=75A Feathers BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls High density cell design for ultra low Rdson TO-220 Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description The FTK75N75 is a new generation of middle voltage and 1 2 3 ... See More ⇒

9.3. Size:327K first silicon
ftk7510.pdf pdf_icon