All MOSFET. FTK1N60L Datasheet

 

FTK1N60L Datasheet and Replacement


   Type Designator: FTK1N60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm
   Package: TO92L
 

 FTK1N60L substitution

   - MOSFET ⓘ Cross-Reference Search

 

FTK1N60L Datasheet (PDF)

 7.1. Size:220K  first silicon
 ftk1n60t-l.pdf pdf_icon

FTK1N60L

SEMICONDUCTORFTK1N60T/LTECHNICAL DATAPower MOSFET1.0 Amps, 600 VoltsN-CHANNEL MOSFETDESCRIPTIONThe FTK 1N60T/L is a high voltage MOSFET and is designed to1have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheT : TO-92characteristics. This power MOSFET is usually used at high speedswitching app

 7.2. Size:288K  first silicon
 ftk1n60p f d i.pdf pdf_icon

FTK1N60L

SEMICONDUCTORFTK1N60P / F / D / ITECHNICAL DATAPower MOSFET1.0 Amps, 600 VoltsI :N-CHANNEL MOSFET 1TO - 251D :1DESCRIPTIONTO - 252The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P :charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu

Datasheet: FTK138D , FTK138U , FTK15N10D , FTK1N60P , FTK1N60F , FTK1N60D , FTK1N60I , FTK1N60T , 13N50 , FTK2N60D , FTK2N60F , FTK2N60I , FTK2N60P , FTK2N65D , FTK2N65F , FTK2N65I , FTK2N65P .

History: QM4004D | 2SK2916 | SML50J44 | AON2707 | NVMFD5C446N | SML20S56 | 2SK2826-ZJ

Keywords - FTK1N60L MOSFET datasheet

 FTK1N60L cross reference
 FTK1N60L equivalent finder
 FTK1N60L lookup
 FTK1N60L substitution
 FTK1N60L replacement

 

 
Back to Top

 


 
.