FTK1N60L PDF and Equivalents Search

 

FTK1N60L Specs and Replacement

Type Designator: FTK1N60L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm

Package: TO92L

FTK1N60L substitution

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FTK1N60L datasheet

 7.1. Size:220K  first silicon
 ftk1n60t-l.pdf pdf_icon

FTK1N60L

SEMICONDUCTOR FTK1N60T/L TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 1N60T/L is a high voltage MOSFET and is designed to 1 have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche T TO-92 characteristics. This power MOSFET is usually used at high speed switching app... See More ⇒

 7.2. Size:288K  first silicon
 ftk1n60p f d i.pdf pdf_icon

FTK1N60L

SEMICONDUCTOR FTK1N60P / F / D / I TECHNICAL DATA Power MOSFET 1.0 Amps, 600 Volts I N-CHANNEL MOSFET 1 TO - 251 D 1 DESCRIPTION TO - 252 The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usu... See More ⇒

Detailed specifications: FTK138D , FTK138U , FTK15N10D , FTK1N60P , FTK1N60F , FTK1N60D , FTK1N60I , FTK1N60T , TK10A60D , FTK2N60D , FTK2N60F , FTK2N60I , FTK2N60P , FTK2N65D , FTK2N65F , FTK2N65I , FTK2N65P .

History: AP75N07GP

Keywords - FTK1N60L MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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