All MOSFET. IRF531 Datasheet

 

IRF531 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF531
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 79 W
   Maximum Drain-Source Voltage |Vds|: 80 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 14 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 30(max) nC
   Rise Time (tr): 75(max) nS
   Drain-Source Capacitance (Cd): 260(max) pF
   Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm
   Package: TO220

 IRF531 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF531 Datasheet (PDF)

 ..1. Size:276K  st
irf530 irf531 irf532 irf533-fi.pdf

IRF531 IRF531

 9.1. Size:166K  motorola
irf530.rev1.1.pdf

IRF531 IRF531

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF530/DProduct PreviewIRF530TMOS E-FET.Power Field Effect TransistorN Channel Enhancement Mode Silicon GateTMOS POWER FET

 9.2. Size:173K  motorola
irf530 mot.pdf

IRF531 IRF531

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF530/DAdvance InformationIRF530TMOS E-FET.Power Field Effect TransistorN Channel Enhancement Mode Silicon GateTMOS POWER

 9.3. Size:175K  international rectifier
irf530.pdf

IRF531 IRF531

 9.4. Size:700K  international rectifier
irf5305lpbf irf5305spbf.pdf

IRF531 IRF531

PD - 95957IRF5305S/LPbF Lead-Freewww.irf.com 14/21/05IRF5305S/LPbF2 www.irf.comIRF5305S/LPbFwww.irf.com 3IRF5305S/LPbF4 www.irf.comIRF5305S/LPbFwww.irf.com 5IRF5305S/LPbF6 www.irf.comIRF5305S/LPbFwww.irf.com 7IRF5305S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationT HIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNATIONALASSE

 9.5. Size:2177K  international rectifier
irf530pbf.pdf

IRF531 IRF531

PD - 94931IRF530PbF Lead-Free1/8/04Document Number: 91019 www.vishay.com1IRF530PbFDocument Number: 91019 www.vishay.com2IRF530PbFDocument Number: 91019 www.vishay.com3IRF530PbFDocument Number: 91019 www.vishay.com4IRF530PbFDocument Number: 91019 www.vishay.com5IRF530PbFDocument Number: 91019 www.vishay.com6IRF530PbFTO-220AB Package OutlineD

 9.6. Size:197K  international rectifier
irf530s.pdf

IRF531 IRF531

IRF530S, SiHF530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt RatingQgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating TemperatureQgd (nC) 11 Fast SwitchingConfigu

 9.7. Size:171K  international rectifier
irf5305s.pdf

IRF531 IRF531

PD - 91386CIRF5305S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5305S)VDSS = -55V Low-profile through-hole (IRF5305L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -31A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 9.8. Size:1851K  international rectifier
irf530spbf.pdf

IRF531 IRF531

PD- 95982IRF530SPbF Lead-Free12/21/04Document Number: 91020 www.vishay.com1IRF530SPbFDocument Number: 91020 www.vishay.com2IRF530SPbFDocument Number: 91020 www.vishay.com3IRF530SPbFDocument Number: 91020 www.vishay.com4IRF530SPbFDocument Number: 91020 www.vishay.com5IRF530SPbFDocument Number: 91020 www.vishay.com6IRF530SPbFPeak Diode Recovery

 9.9. Size:124K  international rectifier
irf5305.pdf

IRF531 IRF531

PD - 91385BIRF5305HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -31ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

 9.10. Size:182K  international rectifier
irf5305pbf.pdf

IRF531 IRF531

PD - 94788IRF5305PbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -31A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 9.11. Size:178K  international rectifier
irf530ns.pdf

IRF531 IRF531

PD - 91352AIRF530NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175C Operating TemperatureRDS(on) = 0.11G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low o

 9.12. Size:183K  international rectifier
irf530npbf.pdf

IRF531 IRF531

PD - 94962IRF530NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90ml Fast SwitchingGl Fully Avalanche RatedID = 17Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremel

 9.13. Size:279K  international rectifier
irf530nspbf.pdf

IRF531 IRF531

PD - 95100IRF530NSPbFIRF530NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90mGl Fast Switchingl Fully Avalanche RatedID = 17Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achi

 9.14. Size:212K  international rectifier
irf530n.pdf

IRF531 IRF531

PD - 91351IRF530NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 90mG Fast Switching Fully Avalanche RatedID = 17ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistanc

 9.15. Size:98K  philips
irf530n 1.pdf

IRF531 IRF531

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 17 AgRDS(ON) 110 msGENERAL DESCRIPTION PINNING SOT78 (TO220AB)N-channel enhancement mode PIN DESCRIPTIONtabfield-effect po

 9.16. Size:53K  st
irf530.pdf

IRF531 IRF531

IRF530IRF530FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDIRF530 100 V

 9.17. Size:77K  st
irf530fp.pdf

IRF531 IRF531

IRF530FPN - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORTYPE VDSS RDS(on) IDIRF530FP 100 V

 9.18. Size:180K  fairchild semi
irf530.pdf

IRF531 IRF531

 9.19. Size:254K  fairchild semi
irf530a.pdf

IRF531 IRF531

IRF530AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating AreaTO-220 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.092 (Typ.)1231.Gate 2. Drain 3. Sourc

 9.20. Size:944K  samsung
irf530a.pdf

IRF531 IRF531

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

 9.21. Size:360K  samsung
irfp130-131 irf530-533.pdf

IRF531 IRF531

 9.22. Size:171K  vishay
irf530s sihf530s.pdf

IRF531 IRF531

IRF530S, SiHF530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt RatingQgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating TemperatureQgd (nC) 11 Fast SwitchingConfigu

 9.23. Size:201K  vishay
irf530 sihf530.pdf

IRF531 IRF531

IRF530, SiHF530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.16RoHS* 175 C Operating TemperatureQg (Max.) (nC) 26COMPLIANT Fast SwitchingQgs (nC) 5.5 Ease of ParallelingQgd (nC) 11 Simple Drive RequirementsConfiguration Single Complian

 9.24. Size:279K  infineon
irf530nspbf irf530nlpbf.pdf

IRF531 IRF531

PD - 95100IRF530NSPbFIRF530NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90mGl Fast Switchingl Fully Avalanche RatedID = 17Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achi

 9.25. Size:700K  infineon
irf5305spbf irf5305lpbf.pdf

IRF531 IRF531

PD - 95957IRF5305S/LPbF Lead-Freewww.irf.com 14/21/05IRF5305S/LPbF2 www.irf.comIRF5305S/LPbFwww.irf.com 3IRF5305S/LPbF4 www.irf.comIRF5305S/LPbFwww.irf.com 5IRF5305S/LPbF6 www.irf.comIRF5305S/LPbFwww.irf.com 7IRF5305S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationT HIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNATIONALASSE

 9.26. Size:182K  infineon
irf5305pbf.pdf

IRF531 IRF531

PD - 94788IRF5305PbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -31A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 9.27. Size:183K  infineon
irf530npbf.pdf

IRF531 IRF531

PD - 94962IRF530NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90ml Fast SwitchingGl Fully Avalanche RatedID = 17Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremel

 9.28. Size:370K  onsemi
irf530a.pdf

IRF531 IRF531

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.29. Size:74K  intersil
irf530 rf1s530sm.pdf

IRF531 IRF531

IRF530, RF1S530SMData Sheet November 1999 File Number 1575.614A, 100V, 0.160 Ohm, N-Channel Power FeaturesMOSFETs 14A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.160power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in th

 9.30. Size:2441K  cn vbsemi
irf5305str.pdf

IRF531 IRF531

IRF5305STRwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Loa

 9.31. Size:848K  cn vbsemi
irf530s.pdf

IRF531 IRF531

IRF530Swww.VBsemi.twwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.100 at VGS = 10 V10020COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDD2PAK(TO-263)GGDSSN-Channel MOSFET

 9.32. Size:854K  cn vbsemi
irf530ns.pdf

IRF531 IRF531

IRF530NSwww.VBsemi.twwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.100 at VGS = 10 V10020COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDD2PAK(TO-263)GGDSSN-Channel MOSFET

 9.33. Size:808K  cn vbsemi
irf530n.pdf

IRF531 IRF531

IRF530Nwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXI

 9.34. Size:235K  inchange semiconductor
irf530.pdf

IRF531 IRF531

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF530FEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power suppli

 9.35. Size:241K  inchange semiconductor
irf5305.pdf

IRF531 IRF531

isc P-Channel MOSFET Transistor IRF5305,IIRF5305FEATURESStatic drain-source on-resistance:RDS(on)0.06Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliab

 9.36. Size:258K  inchange semiconductor
irf530ns.pdf

IRF531 IRF531

Isc N-Channel MOSFET Transistor IRF530NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 9.37. Size:245K  inchange semiconductor
irf530n.pdf

IRF531 IRF531

isc N-Channel MOSFET Transistor IRF530NIIRF530NFEATURESStatic drain-source on-resistance:RDS(on) 0.09Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 9.38. Size:256K  inchange semiconductor
irf530nl.pdf

IRF531 IRF531

Isc N-Channel MOSFET Transistor IRF530NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

Datasheet: IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS , IRFP260N , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRF540N , IRF540NL , IRF540NS .

 

 
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