All MOSFET. FTK2N60P Datasheet

 

FTK2N60P Datasheet and Replacement


   Type Designator: FTK2N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO220
 

 FTK2N60P substitution

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FTK2N60P Datasheet (PDF)

 ..1. Size:295K  first silicon
 ftk2n60p f d i.pdf pdf_icon

FTK2N60P

SEMICONDUCTORFTK2N60P / F / D / ITECHNICAL DATA2 Amps, 600 Volts N-CHANNEL MOSFET I :1TO - 251DESCRIPTIONThe FTK 2N60 is a high voltage MOSFET and is designed to D :have better characteristics, such as fast switching time, low gate 1TO - 252charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high sp

 8.1. Size:340K  first silicon
 ftk2n65p f d i.pdf pdf_icon

FTK2N60P

SEMICONDUCTORFTK2N65P / F / D / ITECHNICAL DATA2 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectTransistors are produced using planar stripe, DMOSI :technology.1This advanced technology has been especially tailoredTO - 251to minimize on - state resistance , provide superiorswitching performance,and Withstand high energy

Datasheet: FTK1N60F , FTK1N60D , FTK1N60I , FTK1N60T , FTK1N60L , FTK2N60D , FTK2N60F , FTK2N60I , IRFP250 , FTK2N65D , FTK2N65F , FTK2N65I , FTK2N65P , FTK4N60D , FTK4N60F , FTK4N60I , FTK4N60P .

History: JFPC12N60C | IRFP448PBF | PPMET20V08E | PHP101NQ04T | IRFP4321PBF | BLF7G27L-150P | SJMN360R70ZF

Keywords - FTK2N60P MOSFET datasheet

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