FTK4N70I Datasheet and Replacement
Type Designator: FTK4N70I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO251
FTK4N70I substitution
FTK4N70I Datasheet (PDF)
ftk4n70p f d i.pdf
SEMICONDUCTORFTK4N70P/F/I/DTECHNICAL DATA4 Amps, 700 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251DESCRIPTIOND :1TO - 252The FTK4N70 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used
ftk4n65p f d i.pdf
SEMICONDUCTORFTK4N65P/F/I/DTECHNICAL DATA4 Amps, 650 Volt Power MOSFETN-CHANNEL POWER MOSFETI :1TO - 251D :DESCRIPTION1TO - 252The FTK4N65 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usually used
ftk4n60p f d i.pdf
SEMICONDUCTORFTK4N60P / F / D / ITECHNICAL DATAPower MOSFET4 Amps, 600 VoltI :N-CHANNEL POWER MOSFET1TO - 251D :DESCRIPTION1TO - 252The FTK 4N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalancheP :characteristics. This power MOSFET is usua
Datasheet: FTK4N60I , FTK4N60P , FTK4N65D , FTK4N65F , FTK4N65I , FTK4N65P , FTK4N70D , FTK4N70F , 8N60 , FTK4N70P , FTK2005DFN23 , FTK2012 , FTK20N06D , FTK2101 , FTK2102 , FTK2301 , FTK2302 .
Keywords - FTK4N70I MOSFET datasheet
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FTK4N70I replacement
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