FTK2304 Specs and Replacement

Type Designator: FTK2304

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT23

FTK2304 substitution

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FTK2304 datasheet

 ..1. Size:281K  first silicon
 ftk2304.pdf pdf_icon

FTK2304

SEMICONDUCTOR FTK2304 TECHNICAL DATA D DESCRIPTION The FTK2304 uses advanced trench technology to G provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D VDS = 30V ,ID = 3.3A 3 RDS(ON) ... See More ⇒

 8.1. Size:420K  first silicon
 ftk2306a.pdf pdf_icon

FTK2304

SEMICONDUCTOR FTK2306A TECHNICAL DATA N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 47m @10V 30V 3.16A 65m @4.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING Equivalent Circuit Maximum ratings (at TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source... See More ⇒

 8.2. Size:247K  first silicon
 ftk2302.pdf pdf_icon

FTK2304

SEMICONDUCTOR FTK2302 TECHNICAL DATA 20V N-Channel Enhancement-Mode MOSFET D DESCRIPTION The FTK2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,I... See More ⇒

 8.3. Size:344K  first silicon
 ftk2306.pdf pdf_icon

FTK2304

SEMICONDUCTOR FTK2306 TECHNICAL DATA D DESCRIPTION The FTK2306 uses advanced trench technology to provide excellent RDS(ON), G low gate charge and operation with gate voltages as low as 2.5V. S Schematic diagram GENERAL FEATURES D VDS = 30V,ID = 5A 3 RDS(ON) ... See More ⇒

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Detailed specifications: FTK4N70P, FTK2005DFN23, FTK2012, FTK20N06D, FTK2101, FTK2102, FTK2301, FTK2302, IRFZ46N, FTK2306, FTK2306A, FTK2310, FTK2312, FTK2324, FTK2333, FTK2341E, FTK25N03PDFN33

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.