All MOSFET. IRF540A Datasheet

 

IRF540A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF540A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 107 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 28 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 60 nC
   Rise Time (tr): 18 nS
   Drain-Source Capacitance (Cd): 325 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm
   Package: TO220

 IRF540A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF540A Datasheet (PDF)

 ..1. Size:256K  fairchild semi
irf540a.pdf

IRF540A
IRF540A

IRF540AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input CapacitanceID = 28 A Improved Gate Charge Extended Safe Operating AreaTO-220 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 (Typ.)1231.Gate 2. Drain 3. Sour

 ..2. Size:951K  samsung
irf540a.pdf

IRF540A
IRF540A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input CapacitanceID = 28 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximu

 ..3. Size:283K  inchange semiconductor
irf540a.pdf

IRF540A
IRF540A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF540AFEATURESStatic drain-source on-resistance:RDS(on) 52m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies.ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:144K  motorola
irf540 mot.pdf

IRF540A
IRF540A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF540/DAdvance InformationIRF540TMOS E-FET.Power Field Effect TransistorN Channel Enhancement Mode Silicon GateTMOS POWER

 8.2. Size:142K  motorola
irf540.rev3.2.pdf

IRF540A
IRF540A

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF540/DProduct PreviewIRF540TMOS E-FET.Power Field Effect TransistorN Channel Enhancement Mode Silicon GateTMOS POWER FET

 8.3. Size:326K  international rectifier
auirf540zstrl.pdf

IRF540A
IRF540A

PD - 96326AUTOMOTIVE GRADEAUIRF540ZAUIRF540ZSFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance V(BR)DSS100Vl 175C Operating TemperatureRDS(on) typ.21ml Fast Switchingl Repetitive Avalanche Allowed up to TjmaxGmax. 26.5ml Lead-Free, RoHS CompliantID 36Al Automotive Qualified *SDescriptionSpecifically designe

 8.4. Size:173K  international rectifier
irf540z.pdf

IRF540A
IRF540A

PD - 94644IRF540ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 29.5m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 34ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes t

 8.5. Size:1312K  international rectifier
irf540pbf.pdf

IRF540A
IRF540A

PD - 94848IRF540PbF Lead-Free11/17/03Document Number: 91021 www.vishay.com1IRF540PbFDocument Number: 91021 www.vishay.com2IRF540PbFDocument Number: 91021 www.vishay.com3IRF540PbFDocument Number: 91021 www.vishay.com4IRF540PbFDocument Number: 91021 www.vishay.com5IRF540PbFDocument Number: 91021 www.vishay.com6IRF540PbFTO-220AB Package Outline

 8.6. Size:125K  international rectifier
irf540ns.pdf

IRF540A
IRF540A

PD - 91342IRF540NSIRF540NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely low on-r

 8.7. Size:302K  international rectifier
irf540zpbf.pdf

IRF540A
IRF540A

PD - 94758IRF540ZAUTOMOTIVE MOSFETIRF540ZSIRF540ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mGDescriptionID = 36ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

 8.8. Size:1411K  international rectifier
irf540spbf.pdf

IRF540A
IRF540A

PD- 95983IRF540SPbF Lead-Free12/21/04Document Number: 91022 www.vishay.com1IRF540SPbFDocument Number: 91022 www.vishay.com2IRF540SPbFDocument Number: 91022 www.vishay.com3IRF540SPbFDocument Number: 91022 www.vishay.com4IRF540SPbFDocument Number: 91022 www.vishay.com5IRF540SPbFDocument Number: 91022 www.vishay.com6IRF540SPbFPeak Diode Recovery

 8.9. Size:279K  international rectifier
irf540nlpbf irf540nspbf.pdf

IRF540A
IRF540A

PD - 95130IRF540NSPbFIRF540NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from ID = 33AInternational Rectifier utilize advanced processing Stechniques to achi

 8.10. Size:153K  international rectifier
irf540npbf.pdf

IRF540A
IRF540A

PD - 94812IRF540NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44m Fast SwitchingG Fully Avalanche RatedID = 33A Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely l

 8.11. Size:196K  international rectifier
irf540s irf540spbf.pdf

IRF540A
IRF540A

IRF540S, SiHF540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Surface MountRDS(on) ()VGS = 10 V 0.077 Available in Tape and Reel Qg (Max.) (nC) 72 Dynamic dV/dt RatingQgs (nC) 11 Repetitive Avalanche RatedQgd (nC) 32 175 C Operating TemperatureConfiguration Single Fa

 8.12. Size:376K  international rectifier
irf540zlpbf irf540zspbf.pdf

IRF540A
IRF540A

PD - 95531AIRF540ZPbFIRF540ZSPbFIRF540ZLPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mG Lead-FreeID = 36ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremel

 8.13. Size:177K  international rectifier
irf540.pdf

IRF540A
IRF540A

 8.14. Size:99K  international rectifier
irf540n.pdf

IRF540A
IRF540A

PD - 91341BIRF540NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44mG Fast Switching Fully Avalanche RatedID = 33ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

 8.15. Size:184K  international rectifier
irf540s.pdf

IRF540A
IRF540A

 8.16. Size:88K  philips
irf540 s 1.pdf

IRF540A
IRF540A

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 AgRDS(ON) 77 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic envelope us

 8.17. Size:481K  st
irf540 irf541 irf542 irf543-fi.pdf

IRF540A
IRF540A

 8.18. Size:53K  st
irf540.pdf

IRF540A
IRF540A

IRF540IRF540FIN - CHANNEL100V - 00.50 - 30A - TO-220/TO-220FIPOWER MOSFETTYPE VDSS RDS(on) IDIRF540 100 V

 8.19. Size:146K  fairchild semi
irf540.pdf

IRF540A
IRF540A

 8.20. Size:112K  fairchild semi
irf540 rf1s540sm.pdf

IRF540A
IRF540A

IRF540, RF1S540SMData Sheet January 200228A, 100V, 0.077 Ohm, N-Channel Power FeaturesMOSFETs 28A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.077power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

 8.21. Size:202K  vishay
irf540 sihf540.pdf

IRF540A
IRF540A

IRF540, SiHF540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.077RoHS* 175 C Operating TemperatureQg (Max.) (nC) 72COMPLIANT Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Complian

 8.22. Size:277K  infineon
irf540ns irf540nl.pdf

IRF540A
IRF540A

PD - 91342BIRF540NSIRF540NLl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely l

 8.23. Size:302K  infineon
irf540z irf540zs irf540zl.pdf

IRF540A
IRF540A

PD - 94758IRF540ZAUTOMOTIVE MOSFETIRF540ZSIRF540ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mGDescriptionID = 36ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

 8.24. Size:153K  infineon
irf540npbf.pdf

IRF540A
IRF540A

PD - 94812IRF540NPbFHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 44m Fast SwitchingG Fully Avalanche RatedID = 33A Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely l

 8.25. Size:702K  infineon
auirf540z auirf540zs.pdf

IRF540A
IRF540A

AUIRF540Z AUTOMOTIVE GRADE AUIRF540ZS Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 175C Operating Temperature 21m Fast Switching max. 26.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 36A Automotive Qualified * Description D

 8.26. Size:2432K  kexin
irf540ns.pdf

IRF540A
IRF540A

SMD Type MOSFETN-Channel MOSFETIRF540NS (KRF540NS)TO-263Unit:mm 9.65 (Min)10.67 (Max) Features5.33 (Min) VDS (V) = 100V 90 ~ 93 ID = 33 A (VGS = 10V) RDS(ON) 44m (VGS = 10V)6.22 (min) Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max)1.65 (max)D1.27~1.781.14~1.400.43~0.63G 1 Gate0.51~0.992 Drain 2.543 Sour

 8.27. Size:676K  slkor
irf540ns irf540n.pdf

IRF540A
IRF540A

IRF540N/NS100V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) TO-263 Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking IRF540N TO-220 IRF540N IRF540NS TO-263 IRF540NS Absolute Maxim

 8.28. Size:2107K  cn vbsemi
irf540zp.pdf

IRF540A
IRF540A

IRF540ZPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.018 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE MA

 8.29. Size:1657K  cn vbsemi
irf540nstrpbf.pdf

IRF540A
IRF540A

IRF540NSTRPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDD2PAK (TO-263)GDGSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,

 8.30. Size:817K  cn vbsemi
irf540n.pdf

IRF540A
IRF540A

IRF540Nwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

 8.31. Size:881K  cn vbsemi
irf540s.pdf

IRF540A
IRF540A

IRF540Swww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDD2PAK (TO-263)GDGSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

 8.32. Size:255K  inchange semiconductor
irf540nl.pdf

IRF540A
IRF540A

Isc N-Channel MOSFET Transistor IRF540NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

 8.33. Size:251K  inchange semiconductor
irf540z.pdf

IRF540A
IRF540A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF540ZIIRF540ZFEATURESStatic drain-source on-resistance:RDS(on) 0.0265Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 8.34. Size:257K  inchange semiconductor
irf540ns.pdf

IRF540A
IRF540A

Isc N-Channel MOSFET Transistor IRF540NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 8.35. Size:256K  inchange semiconductor
irf540zl.pdf

IRF540A
IRF540A

Isc N-Channel MOSFET Transistor IRF540ZLFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 8.36. Size:205K  inchange semiconductor
irf540fi.pdf

IRF540A
IRF540A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF540FIFEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for high voltage,high speed applications,such as off-line switching power su

 8.37. Size:258K  inchange semiconductor
irf540zs.pdf

IRF540A
IRF540A

Isc N-Channel MOSFET Transistor IRF540ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 8.38. Size:242K  inchange semiconductor
irf540npbf.pdf

IRF540A
IRF540A

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF540NPBFFEATURESDrain Current I = 33A@ T =25D CStatic Drain-Source On-Resistance: R = 44m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationDESCRITIONDesigned especially for high voltage,high speed applications,such as off-line switchi

 8.39. Size:227K  inchange semiconductor
irf540.pdf

IRF540A
IRF540A

isc N-Channel Mosfet Transistor IRF540FEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmoto

 8.40. Size:244K  inchange semiconductor
irf540n.pdf

IRF540A
IRF540A

isc N-Channel MOSFET Transistor IRF540NIIRF540NFEATURESStatic drain-source on-resistance:RDS(on) 0.044Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

Datasheet: IRF530FI , IRF530N , IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF640N , IRF540FI , IRF540N , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A .

 

 
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