FTK3401 Specs and Replacement

Type Designator: FTK3401

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOT23

FTK3401 substitution

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FTK3401 datasheet

 ..1. Size:236K  first silicon
 ftk3401.pdf pdf_icon

FTK3401

SEMICONDUCTOR FTK3401 TECHNICAL DATA D DESCRIPTION The FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D VDS = -30V,ID = -4.2A 3 RDS(ON) ... See More ⇒

 8.1. Size:232K  first silicon
 ftk3400.pdf pdf_icon

FTK3401

SEMICONDUCTOR FTK3400 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor D FEATURE G High dense cell design for extremely low R S DS(ON) Schematic diagram Exceptional on-resistance and maximum DC current capability D 3 R0 G 1 2 S Marking and pin Assignment SOT-23 top view Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit ... See More ⇒

 8.2. Size:305K  first silicon
 ftk3404.pdf pdf_icon

FTK3401

SEMICONDUCTOR FTK3404 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX 3 30m @ 10V 30V 5.8A 2 1 42m @4.5V SOT 23 1. GATE DESCRIPTION 2. SOURCE 3. DRAIN The FTK3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit able for use as a load switch or in PWM applications.The s... See More ⇒

 8.3. Size:380K  first silicon
 ftk3407l.pdf pdf_icon

FTK3401

SEMICONDUCTOR FTK3407L TECHNICAL DATA P-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING R7 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit ... See More ⇒

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Detailed specifications: FTK3018, FTK3022, FTK3051, FTK3134K, FTK3134KD, FTK3139K, FTK3341, FTK3400, 20N60, FTK3404, FTK3407, FTK3407L, FTK3415, FTK3415L, FTK3439KD, FTK3443, FTK35N03PDFN33

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.