All MOSFET. FTK3404 Datasheet

 

FTK3404 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FTK3404
   Marking Code: R4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 1 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 5.8 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 3.1 nS
   Drain-Source Capacitance (Cd): 118 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.03 Ohm
   Package: SOT23

 FTK3404 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTK3404 Datasheet (PDF)

 ..1. Size:305K  first silicon
 ftk3404.pdf

FTK3404 FTK3404

SEMICONDUCTORFTK3404TECHNICAL DATAN-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX 3 30m@ 10V30V5.8A 2142m@4.5V SOT231. GATE DESCRIPTION 2. SOURCE 3. DRAIN The FTK3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit able for use as a load switch or in PWM applications.The s

 8.1. Size:232K  first silicon
 ftk3400.pdf

FTK3404 FTK3404

SEMICONDUCTORFTK3400TECHNICAL DATAN-Channel Enhancement Mode Field Effect Transistor DFEATURE GHigh dense cell design for extremely low R SDS(ON)Schematic diagram Exceptional on-resistance and maximum DC current capability D3R0G 1 2 SMarking and pin AssignmentSOT-23 top view Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit

 8.2. Size:380K  first silicon
 ftk3407l.pdf

FTK3404 FTK3404

SEMICONDUCTORFTK3407LTECHNICAL DATAP-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications.MARKING: R7 Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit

 8.3. Size:229K  first silicon
 ftk3407.pdf

FTK3404 FTK3404

SEMICONDUCTORFTK3407TECHNICAL DATADDESCRIPTIONThe FTK3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.1A 3RDS(ON)

 8.4. Size:236K  first silicon
 ftk3401.pdf

FTK3404 FTK3404

SEMICONDUCTORFTK3401TECHNICAL DATADDESCRIPTIONThe FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagramGENERAL FEATURESD VDS = -30V,ID = -4.2A 3RDS(ON)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF1404 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: FDN359BN

 

 
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