FTK3N80D Datasheet and Replacement
Type Designator: FTK3N80D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO252
FTK3N80D substitution
FTK3N80D Datasheet (PDF)
ftk3n80p f d i.pdf

SEMICONDUCTORFTK3N80P/F/D/ITECHNICAL DATA3 Amps, 800 VoltsPower MOSFETN-CHANNEL MOSFET I :1TO - 251DESCRIPTIONThe FTK 3N80 is a high voltage MOSFET and is designed toD :1have better characteristics, such as fast switching time, low gateTO - 252charge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at hig
ftk3n80p f.pdf

SEMICONDUCTORFTK3N80P / FTECHNICAL DATAPower MOSFET3 Amps, 800 VoltsN-CHANNEL MOSFET P :1DESCRIPTIONTO-220The FTK 3N80 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedF :switchin
Datasheet: FTK3439KD , FTK3443 , FTK35N03PDFN33 , FTK35N03PDFN56 , FTK3610 , FTK3615 , FTK3620 , FTK3N80I , P55NF06 , FTK3N80P , FTK3N80F , FTK4004 , FTK4015D , FTK40N10D , FTK40P04D , FTK4406 , FTK4407 .
History: SM3024NSU | FK3F0308 | RSS090N03FU6TB | ELM34416AA | WMB108N03T1 | IRLU4343PBF
Keywords - FTK3N80D MOSFET datasheet
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History: SM3024NSU | FK3F0308 | RSS090N03FU6TB | ELM34416AA | WMB108N03T1 | IRLU4343PBF



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