All MOSFET. FTK3N80F Datasheet

 

FTK3N80F MOSFET. Datasheet pdf. Equivalent


   Type Designator: FTK3N80F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO220F

 FTK3N80F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTK3N80F Datasheet (PDF)

 7.1. Size:218K  first silicon
 ftk3n80p f d i.pdf

FTK3N80F FTK3N80F

SEMICONDUCTORFTK3N80P/F/D/ITECHNICAL DATA3 Amps, 800 VoltsPower MOSFETN-CHANNEL MOSFET I :1TO - 251DESCRIPTIONThe FTK 3N80 is a high voltage MOSFET and is designed toD :1have better characteristics, such as fast switching time, low gateTO - 252charge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at hig

 7.2. Size:341K  first silicon
 ftk3n80p f.pdf

FTK3N80F FTK3N80F

SEMICONDUCTORFTK3N80P / FTECHNICAL DATAPower MOSFET3 Amps, 800 VoltsN-CHANNEL MOSFET P :1DESCRIPTIONTO-220The FTK 3N80 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedF :switchin

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FX20ASJ-2 | IRFUC20

 

 
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