All MOSFET. FTK3N80F Datasheet

 

FTK3N80F Datasheet and Replacement


   Type Designator: FTK3N80F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO220F
 

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FTK3N80F Datasheet (PDF)

 7.1. Size:218K  first silicon
 ftk3n80p f d i.pdf pdf_icon

FTK3N80F

SEMICONDUCTORFTK3N80P/F/D/ITECHNICAL DATA3 Amps, 800 VoltsPower MOSFETN-CHANNEL MOSFET I :1TO - 251DESCRIPTIONThe FTK 3N80 is a high voltage MOSFET and is designed toD :1have better characteristics, such as fast switching time, low gateTO - 252charge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at hig

 7.2. Size:341K  first silicon
 ftk3n80p f.pdf pdf_icon

FTK3N80F

SEMICONDUCTORFTK3N80P / FTECHNICAL DATAPower MOSFET3 Amps, 800 VoltsN-CHANNEL MOSFET P :1DESCRIPTIONTO-220The FTK 3N80 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedF :switchin

Datasheet: FTK35N03PDFN33 , FTK35N03PDFN56 , FTK3610 , FTK3615 , FTK3620 , FTK3N80I , FTK3N80D , FTK3N80P , IRFB4110 , FTK4004 , FTK4015D , FTK40N10D , FTK40P04D , FTK4406 , FTK4407 , FTK4409 , FTK4410 .

History: WMS09P06TS | 2SK791 | BUK9Y22-100E | UPA2351T1P | SL3134K | IXFK21N100Q | R6012FNJ

Keywords - FTK3N80F MOSFET datasheet

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