FTK40P04D
MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK40P04D
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 72
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 370
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package:
TO252
FTK40P04D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK40P04D
Datasheet (PDF)
..1. Size:373K first silicon
ftk40p04d.pdf
SEMICONDUCTORFTK40P04DTECHNICAL DATAFTK40P04 P-Channel Power MOSFET AIDESCRIPTION CJThe FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2This device is well suited for high current load applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MA
9.1. Size:578K first silicon
ftk4004.pdf
SEMICONDUCTORFTK4004TECHNICAL DATAFeathers: ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 mmax. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK4004 is a new generation of high voltage and low curre
9.2. Size:342K first silicon
ftk40n10d.pdf
SEMICONDUCTORFTK40N10DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION DIM MILLIMETERSThis advanced high voltage MOSFET is designed to stand high A 6 50 0 2B 5 60 0 2C 5 20 0 2energy in the avalanche mode and switch efficiently. D 1 50 0 2E 2 70 0 2F 2 30 0 1This new high energy device also offers a drainHH 1 00 MAXI 2 30
9.3. Size:375K first silicon
ftk4015d.pdf
SEMICONDUCTORFTK4015DTECHNICAL DATAMain Product Characteristics: VDSS -40V D RDS(on) 11m (typ.) GID 20A SSchematic diagram DFeatures and Benefits: Advanced trench MOSFET process technology S Special designed for PWM, load switching and GTO-252 top viewgeneral purpose applications Ultra low on-resistance with low gate charge High Power and current
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