All MOSFET. IRF540NL Datasheet

 

IRF540NL Datasheet and Replacement


   Type Designator: IRF540NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TO262
      - MOSFET Cross-Reference Search

 

IRF540NL Datasheet (PDF)

 ..1. Size:277K  international rectifier
irf540ns irf540nl.pdf pdf_icon

IRF540NL

PD - 91342BIRF540NSIRF540NLl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely l

 ..2. Size:279K  international rectifier
irf540nlpbf irf540nspbf.pdf pdf_icon

IRF540NL

PD - 95130IRF540NSPbFIRF540NLPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 44ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from ID = 33AInternational Rectifier utilize advanced processing Stechniques to achi

 ..3. Size:255K  inchange semiconductor
irf540nl.pdf pdf_icon

IRF540NL

Isc N-Channel MOSFET Transistor IRF540NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

 7.1. Size:125K  international rectifier
irf540ns.pdf pdf_icon

IRF540NL

PD - 91342IRF540NSIRF540NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche RatedRDS(on) = 44mDescription GAdvanced HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processing ID = 33AStechniques to achieve extremely low on-r

Datasheet: IRF530NS , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRF540N , IRFB4115 , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A , IRF610S .

History: SPB65R180G

Keywords - IRF540NL MOSFET datasheet

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