2SK2769-01MR Datasheet and Replacement
Type Designator: 2SK2769-01MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: TO220F
2SK2769-01MR Datasheet (PDF)
2sk2769-01mr.pdf

FUJI POWER MOSFET2SK2769-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220F15FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proof2.54ApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC converters SC-67EIAJMaximum ratings and characteristicAbsolute maximum
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2sk2767-01.pdf

N-channel MOS-FET2SK2767-01FAP-IIS Series 900V 5,5 3,5A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris
Datasheet: FTK4703 , FTK4822 , FTK4828 , FTK4828D , FTK4828F , FTK4953 , 2SJ463A , 2SK1723 , RFP50N06 , 2SK3113 , 2SK3687-01MR , 2SK3919 , 2SK4213 , IRF260B , IRF260C , 2N3458 , 2N3459 .
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