IRF260C Datasheet and Replacement
Type Designator: IRF260C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 1200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO247AB
IRF260C substitution
IRF260C Datasheet (PDF)
irf260b irf260c.pdf

RoHS IRF260 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET50A, 200VoltsDESCRIPTIOND The Nell IRF260 is a three-terminal silicon devicewith current conduction capability of 50A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G
Datasheet: 2SJ463A , 2SK1723 , 2SK2769-01MR , 2SK3113 , 2SK3687-01MR , 2SK3919 , 2SK4213 , IRF260B , STP80NF70 , 2N3458 , 2N3459 , 2N3460 , 2SJ599 , 2SK1657 , FMH20N60S1 , IRF630B , IRFP264N .
History: APT5024BLLG | 2SK1488 | 45N06 | AP80N04Q | FDS89141 | 2SK3818 | 2SK3819
Keywords - IRF260C MOSFET datasheet
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History: APT5024BLLG | 2SK1488 | 45N06 | AP80N04Q | FDS89141 | 2SK3818 | 2SK3819



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