WCM2001 Datasheet and Replacement
Type Designator: WCM2001
Marking Code: 3J
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 0.65(3.1) A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31(0.12) Ohm
Package: DFN2X2-6L
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WCM2001 Datasheet (PDF)
wcm2001.pdf

WCM2001WCM2001N- and P-Channel Complementary, 20V, MOSFET Http://www.willsemi.com V(BR)DSS RDS(on) Typ. ( m )180 @ 4.5V N-Channel 225 @ 2.5V20 V 280 @ 1.8V85 @ -4.5V P-Channel 110 @ -2.5V-20 V 150 @ -1.8VD1 G2 S26 5 4DescriptionsThe WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3package for DC-DC converter or Lo
wcm2007.pdf

WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http://www.sh-willsemi.com V(BR)DSS RDS(on) Typical. () 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S26 5 4The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl
wcm2002.pdf

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wcm2079.pdf

WCM2079WCM2079N- and P-Channel Complementary, 20V,MOSFET http://www.sh-willsemi.comV (V) Typical R ()DS DS(on)N-Channel 0.020@V =10VGS20 0.023@V =4.5VGS(4)(3)0.028@V =-10VP-Channel GS(2)-20 0.035@V =-4.5V (1)GSSOP-8LDescriptionsThe WCM2079 is the N-Channel and P-Channelenhancement MOS Field Effect Transistor as asingle package for DC-DC converter or le
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AP3R303GMT | BRFL10N65S
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History: AP3R303GMT | BRFL10N65S



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