WCM2002 Specs and Replacement
Type Designator: WCM2002
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.31(0.29) W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.8(0.59) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31(0.81) Ohm
Package: SOT363
WCM2002 substitution
- MOSFET ⓘ Cross-Reference Search
WCM2002 datasheet
wcm2002.pdf
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wcm2007.pdf
WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http //www.sh-willsemi.com V(BR)DSS RDS(on) Typical. ( ) 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S2 6 5 4 The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl... See More ⇒
wcm2001.pdf
WCM2001 WCM2001 N- and P-Channel Complementary, 20V, MOSFET Http //www.willsemi.com V(BR)DSS RDS(on) Typ. ( m ) 180 @ 4.5V N-Channel 225 @ 2.5V 20 V 280 @ 1.8V 85 @ -4.5V P-Channel 110 @ -2.5V -20 V 150 @ -1.8V D1 G2 S2 6 5 4 Descriptions The WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3 package for DC-DC converter or Lo... See More ⇒
wcm2079.pdf
WCM2079 WCM2079 N- and P-Channel Complementary, 20V,MOSFET http //www.sh-willsemi.com V (V) Typical R ( ) DS DS(on) N-Channel 0.020@V =10V GS 20 0.023@V =4.5V GS (4) (3) 0.028@V =-10V P-Channel GS (2) -20 0.035@V =-4.5V (1) GS SOP-8L Descriptions The WCM2079 is the N-Channel and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or le... See More ⇒
Detailed specifications: SST110, SST111, SST112, SST113, SST404, SST405, SST406, WCM2001, IRF520, WCM2007, WCM2068, WNM07N60, WNM07N60F, WNM07N65, WNM07N65F, WNM12N65, WNM12N65F
Keywords - WCM2002 MOSFET specs
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