WCM2068 Datasheet and Replacement
Type Designator: WCM2068
Marking Code: MA
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.4(2.8) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046(0.116) Ohm
Package: SOT23-6L
WCM2068 substitution
WCM2068 Datasheet (PDF)
wcm2068.pdf

WCM2068WCM2068N- and P-Channel Complementary, 20V,MOSFET Http://www. sh- willsemi.comVDS (V) Typical RDS(on) ()0.033@ VGS=4.5VN-Channel0.037@ VGS=3.3V200.041@ VGS=2.5V0.085@VGS=- 4.5VP-ChannelSOT-23-6L0.097@VGS= -3.3V-200.110@VGS= -2.5VDescriptionsThe WCM2068 is the N-Channel andP-Channel enhancement MOS Field EffectTransistor as a single package for DC-DC
wcm2079.pdf

WCM2079WCM2079N- and P-Channel Complementary, 20V,MOSFET http://www.sh-willsemi.comV (V) Typical R ()DS DS(on)N-Channel 0.020@V =10VGS20 0.023@V =4.5VGS(4)(3)0.028@V =-10VP-Channel GS(2)-20 0.035@V =-4.5V (1)GSSOP-8LDescriptionsThe WCM2079 is the N-Channel and P-Channelenhancement MOS Field Effect Transistor as asingle package for DC-DC converter or le
wcm2007.pdf

WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http://www.sh-willsemi.com V(BR)DSS RDS(on) Typical. () 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S26 5 4The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl
wcm2002.pdf

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - WCM2068 MOSFET datasheet
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